Examination of a simplified reaction-diffusion model for post exposure bake of chemically amplified resists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue 1, 2001, Pages 1022-1036

  Smith, Mark D ^a   Mack, Chris A ^a  

^a 8834 North Capital of Texas Highway ^*  (United States)

Author keywords

Chemically amplified resists; Lithography simulation; Post exposure bake; PROLITH

Indexed keywords

CATALYSIS; COMPUTER SIMULATION; DIFFUSION; POLYMERS;

LITHOGRAPHY SIMULATIONS;

PHOTORESISTS;

EID: 0034758390     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436827     Document Type: Article

References (5)

1. Modeling and simulation of a chemically amplified DUV resist using the effective acid concept
2. Calibration of chemically amplified resist models
3. Examination of isolated and grouped feature bias in positive acting, chemically amplified resist systems