Dependence of acid generation efficiency on acid molecular structure and concentration of acid generator in chemically amplified EUV resist

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6923, Issue , 2008, Pages

  Hirose, Ryo ^a   Kozawa, Takahiro ^a   Tagawa, Seiichi ^a   Kai, Toshiyuki ^b   Shimokawa, Tsutomu ^b  

^a OSAKA UNIVERSITY   (Japan)

^b JSR CORPORATION   (Japan)

Author keywords

Acid generation efficiency; Acid generator concentration; Chemically amplified resist; EUV lithography; Multispur effect

Indexed keywords

AMPLIFICATION; COMMERCE; ELECTRON BEAM LITHOGRAPHY; MOLECULAR STRUCTURE; PHOTORESISTORS; PHOTORESISTS; QUANTUM CHEMISTRY; ROUGHNESS MEASUREMENT; ULTRAVIOLET DEVICES;

ACID GENERATION EFFICIENCY; ACID GENERATOR CONCENTRATION; CHEMICALLY AMPLIFIED RESIST; EUV LITHOGRAPHY; MULTISPUR EFFECT;

ACIDS;

EID: 57349182251     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772569     Document Type: Conference Paper

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