Quality assessment of antisticking layers for thermal nanoimprint

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 2380-2384

  Scheer, H C ^a   Hafner W ^a   Fidler, A ^a   Mollenbeck S ^a   Bogdanski, N ^a  

^a UNIVERSITY OF WUPPERTAL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONTACT ANGLE; ELECTRON ENERGY LEVELS; VACUUM DEPOSITION;

ANTISTICKING LAYERS; DEPOSITED LAYERS; DEPOSITION TIMES; GAS PHASE; LAYER THICKNESSES; MONOLAYER FORMATIONS; QUALITY ASSESSMENTS; TRICHLOROSILANES; VACUUM PROCESSES; WIDESPREAD USES;

MONOLAYERS;

EID: 57249086339     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3013342     Document Type: Article

References (28)

1. P. Gröning, A. Schneuwly, L. Schlapbach, and M. T. Gale, J. Vac. Sci. Technol. A 14, 3043 (1996).
2. R. W. Jaszewski, H. Schift, P. Gröning, and G. Margitando, Microelectron. Eng. 35, 381 (1997).
3. R. W. Jaszewski, H. Schift, B. Schnyder, A. Schneuwly, and P. Gröning, Appl. Surf. Sci. 143, 301 (1999).
4. H. Schulz, H.-C. Scheer, F. Osenberg, and J. Engemann, Proc. SPIE 3996, 244 (2000).
5. M. Schwartzman, C. Jahnes, and S. Wind, 52nd EIPBN Conference, Portland, OR, (2008).
6. P. Silberzan, L. Leger, D. Ausserre, and J. Benattar, Langmuir 7, 1647 (1991).
7. C. P. Tripp and M. L. Hair, Langmuir 11, 1215 (1995).
8. B. C. Bunker, R. W. Carpick, R. A. Assink, M. L. Thomas, M. G. Hankins, J. A. Voight, D. Sipola, M. P. de Broer, and G. L. Gulley, Langmuir 16, 7742 (2000).
9. T. Nishino, M. Meguro, K. Nakamae, M. Matsushita, and Y. Ueda, Langmuir 15, 4321 (1999).
10. E. Lindner and E. Arias, Langmuir 8, 1195 (1992).
11. U. Srinivasan, M. R. Houston, R. T. Howe, and R. Maboudian, J. Microelectromech. Syst. 7, 252 (1998).
12. R. W. Ashurst, C. Yau, C. Carraro, R. Maboudian, and M. T. Dugger, J. Microelectromech. Syst. 10, 41 (2001).
13. T. M. Mayer, M. P. de Broer, N. D. Shinn, P. J. Clews, and T. A. Michalske, J. Vac. Sci. Technol. B 18, 2433 (2000).
14. M. J. Pellerite, E. J. Wood, and V. W. Jones, J. Phys. Chem. B 106, 4746 (2002).
15. J. B. Brzoska, L. Benazouz, and F. Rondalez, Langmuir 10, 4367 (1999).
16. A. N. Parikh, D. L. Allara, I. B. Azouz, and F. Rondalez, J. Phys. Chem. 98, 7577 (1994).
17. J. V. Davidovits, V. Pho, P. Silberzan, and M. Goldmann, Surf. Sci. 352-354, 369 (1996).
18. R. Maboudian, W. R. Ashurst, and C. Carraro, Sens. Actuators 82, 219 (2000).
19. M. Beck, M. Graczyk, I. Maximov, E.-L. Sarwe, T. G. I. Ling, M. Keil, and L. Montelius, Microelectron. Eng. 61-62, 441 (2002).
20. G.-Y. Jung, Z. Li, W. Wu, Y. Chen, D.-L. Olnyck, S.-Y. Wang, W. M. Tong, and R. S. Williams, Langmuir 21, 1158 (2005).
21. K. Wu, T. B. Bayley, C. G. Wilson, and J. G. Ekerdt, Langmuir 21, 11795 (2005).
22. H. Schift, S. Saxer, S. Park, C. Padeste, U. Pieles, and J. Gobrecht, Nanotechnology 16, 171 (2005).
23. N. Roos, H. Schulz, M. Fink, K. Pfeiffer, F. Osenberg, and H.-C. Scheer, Proc. SPIE 4688, 232 (2002).
24. S. Park, H. Schift, C. Padeste, B. Schnyder, R. Kötz, and J. Gobrecht, Microelectron. Eng. 73-74, 196 (2004).
25. C. P. Tripp and M. L. Hair, Langmuir 11, 149 (1995).
26. Z. Rymuza, Microsyst. Technol. 5, 173 (1999).
27. M. J. Stevens, Langmuir 15, 2773 (1999).
28. F. Schreiber, Prog. Surf. Sci. 65, 151 (2002).