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Volumn 48, Issue , 2009, Pages 13-26

Growth methods and properties of high purity III-V nanowires by molecular beam epitaxy

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EID: 57049167054     PISSN: 14384329     EISSN: None     Source Type: Book Series    
DOI: 10.1007/978-3-540-85859-1_2     Document Type: Article
Times cited : (5)

References (39)
  • 2
    • 30944450630 scopus 로고    scopus 로고
    • Opportunities and challenges of iii-v nanoelectronics for future high-speed, low-power logic applications, Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05
    • Oct.-2 Nov., doi:10.1109/CSICS.2005.1531740
    • R. Chau, S. Datta, A. Majumdar: Opportunities and challenges of iii-v nanoelectronics for future high-speed, low-power logic applications, Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE SP-4 pp. (30 Oct.-2 Nov. 2005) doi:10.1109/CSICS.2005.1531740
    • (2005) IEEE SP-4 pp. (30
    • Chau, R.1    Datta, S.2    Majumdar, A.3
  • 4
    • 22544473589 scopus 로고    scopus 로고
    • One-dimensional hole gas in germanium/silicon nanowire heterostructures
    • doi:10.1073/ pnas.0504581102 URL
    • W. Lu, J. Xiang, B. P. Timko, Y. Wu, C. M. Lieber: One-dimensional hole gas in germanium/silicon nanowire heterostructures, Proceedings of the National Academy of Sciences 102, 10046-10051 (2005) doi:10.1073/ pnas.0504581102 URL http://www.pnas.org/cgi/content/abstract/102/29/10046
    • (2005) Proceedings of the National Academy of Sciences , vol.102 , pp. 10046-10051
    • Lu, W.1    Xiang, J.2    Timko, B.P.3    Wu, Y.4    Lieber, C.M.5
  • 5
    • 33749657116 scopus 로고    scopus 로고
    • Tunable light emission from quantum-confined excitons in tisi2-catalyzed silicon nanowires
    • URL
    • A. Guichard, D. Barsic, S. Sharma, T. Kamins, M. Brongersma: Tunable light emission from quantum-confined excitons in tisi2-catalyzed silicon nanowires, Nano Letters 6, 2140-2144 (2006) URL http://pubs3.acs.org/acs/journals/doilookup?in$\_$doi= 10.1021/nl061287m
    • (2006) Nano Letters , vol.6 , pp. 2140-2144
    • Guichard, A.1    Barsic, D.2    Sharma, S.3    Kamins, T.4    Brongersma, M.5
  • 6
    • 0242349591 scopus 로고    scopus 로고
    • L. Shi, D. Li, C. Yu, W. Jang, D. Kim, Z. Yao, P. Kim, A. Majumdar: Measuring thermal and thermoelectric properties of one-dimensional nanostructures using a microfabricated device, Journal of Heat Transfer 125, 881-888 (2003) doi: 10.1115/1.1597619 URL http://link.aip.org/link/?JHR/125/881/1
    • L. Shi, D. Li, C. Yu, W. Jang, D. Kim, Z. Yao, P. Kim, A. Majumdar: Measuring thermal and thermoelectric properties of one-dimensional nanostructures using a microfabricated device, Journal of Heat Transfer 125, 881-888 (2003) doi: 10.1115/1.1597619 URL http://link.aip.org/link/?JHR/125/881/1
  • 8
    • 0008968837 scopus 로고
    • Electron and hole capture at au and pt centers in silicon
    • doi:10.1103/PhysRevLett.44.606
    • S. D. Brotherton, J. E. Lowther: Electron and hole capture at au and pt centers in silicon, Physical Review Letters 44, 606-609 (1980) doi:10.1103/PhysRevLett.44.606
    • (1980) Physical Review Letters , vol.44 , pp. 606-609
    • Brotherton, S.D.1    Lowther, J.E.2
  • 9
    • 50549104030 scopus 로고    scopus 로고
    • Epitaxial growth of silicon nanowires using an aluminium catalyst
    • URL
    • Y. Wang, V. Schmidt, S. Senz, U. Gosele: Epitaxial growth of silicon nanowires using an aluminium catalyst, Nature Nanotechnology 1, 186-189 (2006) URL http://dx.doi.org/10.1038/nnano.2006.133
    • (2006) Nature Nanotechnology , vol.1 , pp. 186-189
    • Wang, Y.1    Schmidt, V.2    Senz, S.3    Gosele, U.4
  • 10
    • 0000434281 scopus 로고    scopus 로고
    • T. I. Kamins, R. S. Williams, D. P. Basile, T. Hesjedal, J. S. Harris: Ti-catalyzed si nanowires by chemical vapor deposition: Microscopy and growth mechanisms, Journal of Applied Physics 89, 1008-1016 (2001) doi:10.1063/1.1335640 URL http://link.aip.org/link/?JAP/89/1008/1
    • T. I. Kamins, R. S. Williams, D. P. Basile, T. Hesjedal, J. S. Harris: Ti-catalyzed si nanowires by chemical vapor deposition: Microscopy and growth mechanisms, Journal of Applied Physics 89, 1008-1016 (2001) doi:10.1063/1.1335640 URL http://link.aip.org/link/?JAP/89/1008/1
  • 12
    • 39349094181 scopus 로고    scopus 로고
    • A. F. i Morral, C. Colombo, G. Abstreiter, J. Arbiol, J. R. Morante: Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires, Applied Physics Letters 92, 063112 (2008) doi: 10.1063/1.2837191 URL http://link.aip.org/link/?APL/92/ 063112/1
    • A. F. i Morral, C. Colombo, G. Abstreiter, J. Arbiol, J. R. Morante: Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires, Applied Physics Letters 92, 063112 (2008) doi: 10.1063/1.2837191 URL http://link.aip.org/link/?APL/92/ 063112/1
  • 13
    • 0030667407 scopus 로고    scopus 로고
    • Coupled quantum dots fabricated by cleaved edge overgrowth: From artificial atoms to molecules
    • doi:10.1126/ science.278.5344.1792 URL
    • G. Schedelbeck, W. Wegscheider, M. Bichler, G. Abstreiter: Coupled quantum dots fabricated by cleaved edge overgrowth: From artificial atoms to molecules, Science 278, 1792-1795 (1997) doi:10.1126/ science.278.5344.1792 URL http://www.sciencemag.org/cgi/content/abstract/ 278/5344/1792
    • (1997) Science , vol.278 , pp. 1792-1795
    • Schedelbeck, G.1    Wegscheider, W.2    Bichler, M.3    Abstreiter, G.4
  • 14
    • 0028493820 scopus 로고
    • Sharp-line photoluminescence and two-photon absorption of zero-dimensional biexcitons in a gaas/algaas structure
    • doi: 10.1103/PhysRevLett.73.1138
    • K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann: Sharp-line photoluminescence and two-photon absorption of zero-dimensional biexcitons in a gaas/algaas structure, Physical Review Letters 73, 1138-1141 (1994) doi: 10.1103/PhysRevLett.73.1138
    • (1994) Physical Review Letters , vol.73 , pp. 1138-1141
    • Brunner, K.1    Abstreiter, G.2    Böhm, G.3    Tränkle, G.4    Weimann, G.5
  • 15
    • 33646679181 scopus 로고    scopus 로고
    • Energy spectroscopy of controlled coupled quantum-wire states
    • URL
    • S. F. Fischer, G. Apetrii, U. Kunze, D. Schuh, G. Abstreiter: Energy spectroscopy of controlled coupled quantum-wire states, Nature Physics 2, 91-96 (2006) URL http://dx.doi.org/10.1038/nphys205
    • (2006) Nature Physics , vol.2 , pp. 91-96
    • Fischer, S.F.1    Apetrii, G.2    Kunze, U.3    Schuh, D.4    Abstreiter, G.5
  • 17
    • 39649093622 scopus 로고    scopus 로고
    • Growth mechanisms and optical properties of gaas-based semiconductor microstructures by selective area epitaxy
    • URL
    • M. Heiß, E. Riedlberger, D. Spirkoska, M. Bichler, G. Abstreiter, A. F. i. Morral: Growth mechanisms and optical properties of gaas-based semiconductor microstructures by selective area epitaxy, Journal of Crystal Growth 310, 1049-1056 (2008) URL http://www.sciencedirect.com/science/article/B6TJ6-4RHFVM6-1/1/ b4df6ccca6568fdb6a0605ad3db318ab
    • (2008) Journal of Crystal Growth , vol.310 , pp. 1049-1056
    • Heiß, M.1    Riedlberger, E.2    Spirkoska, D.3    Bichler, M.4    Abstreiter, G.5    Morral, A.F.I.6
  • 19
    • 27944495968 scopus 로고    scopus 로고
    • Controlled growth of highly uniform, axial/radial direction-defined, individually addressable inp nanowire arrays
    • URL
    • P. Mohan, J. Motohisa, T. Fukui: Controlled growth of highly uniform, axial/radial direction-defined, individually addressable inp nanowire arrays, Nanotechnology 16, 2903-2907 (2005) URL http://stacks.iop.org/0957-4484/16/2903
    • (2005) Nanotechnology , vol.16 , pp. 2903-2907
    • Mohan, P.1    Motohisa, J.2    Fukui, T.3
  • 22
    • 0001748406 scopus 로고    scopus 로고
    • Gaas equilibrium crystal shape from first principles
    • doi:10.1103/PhysRevB.54.8844
    • N. Moll, A. Kley, E. Pehlke, M. Scheffler: Gaas equilibrium crystal shape from first principles, Physical Review B 54, 8844-8855 (1996) doi:10.1103/PhysRevB.54.8844
    • (1996) Physical Review B , vol.54 , pp. 8844-8855
    • Moll, N.1    Kley, A.2    Pehlke, E.3    Scheffler, M.4
  • 23
    • 0035121253 scopus 로고    scopus 로고
    • Atomic structure of the stoichiometric gaas(114) surface
    • doi:10.1103/PhysRevLett.86.115
    • J. Márquez, P. Kratzer, L. Geelhaar, K. Jacobi, M. Scheffler: Atomic structure of the stoichiometric gaas(114) surface, Physical Review Letters 86, 115-118 (2001) doi:10.1103/PhysRevLett.86.115
    • (2001) Physical Review Letters , vol.86 , pp. 115-118
    • Márquez, J.1    Kratzer, P.2    Geelhaar, L.3    Jacobi, K.4    Scheffler, M.5
  • 24
    • 0029632832 scopus 로고
    • Congruent vaporization of gaas(s) and stability of ga(l) droplets at the gaas(s) surface
    • URL
    • C. Chatillon, D. Chatain: Congruent vaporization of gaas(s) and stability of ga(l) droplets at the gaas(s) surface, Journal of Crystal Growth 151, 91-101 (1995) URL http://www.sciencedirect.com/ science/article/B6TJ6-3Y5MNBT-CW/1/618e13e48368370025ebddc5476f2a8a
    • (1995) Journal of Crystal Growth , vol.151 , pp. 91-101
    • Chatillon, C.1    Chatain, D.2
  • 25
    • 0025564992 scopus 로고
    • Thermodynamic calculations of congruent vaporization in iii-v systems; applications to the in-as, ga-as and ga-in-as systems
    • URL
    • J.-y. Shen, C. Chatillon: Thermodynamic calculations of congruent vaporization in iii-v systems; applications to the in-as, ga-as and ga-in-as systems, Journal of Crystal Growth 106, 543-552 (1990) URL http://www.sciencedirect.com/science/article/B6TJ6-46D26H6-2C/1/ 61e6f54efa66285c41035fc80d35848d
    • (1990) Journal of Crystal Growth , vol.106 , pp. 543-552
    • Shen, J.-Y.1    Chatillon, C.2
  • 26
    • 43049147607 scopus 로고    scopus 로고
    • C. Colombo, D. Spirkoska, M. Frimmer, G. Abstreiter, A. F. i Morral: Gaassisted catalyst-free growth mechanism of gaas nanowires by molecular beam epitaxy, Physical Review B (Condensed Matter and Materials Physics) 77, 155326 (2008) doi:10.1103/PhysRevB.77.155326 URL http://link.aps.org/abstract/PRB/v77/e155326
    • C. Colombo, D. Spirkoska, M. Frimmer, G. Abstreiter, A. F. i Morral: Gaassisted catalyst-free growth mechanism of gaas nanowires by molecular beam epitaxy, Physical Review B (Condensed Matter and Materials Physics) 77, 155326 (2008) doi:10.1103/PhysRevB.77.155326 URL http://link.aps.org/abstract/PRB/v77/e155326
  • 28
    • 56349099860 scopus 로고    scopus 로고
    • D. Spirkoska, G. Abstreiter, A. F. i Morral: Size dependence of the bulk and surface phonon modes of gallium arsenide nanowires as measured by raman spectroscopy, Nanotechnology 19, 435704 (2008)
    • D. Spirkoska, G. Abstreiter, A. F. i Morral: Size dependence of the bulk and surface phonon modes of gallium arsenide nanowires as measured by raman spectroscopy, Nanotechnology 19, 435704 (2008)
  • 29
    • 2442582808 scopus 로고
    • Influence of volume dope on fermi level position at gallium arsenide surfaces
    • URL
    • J. Van Laar, J. J. Scheer: Influence of volume dope on fermi level position at gallium arsenide surfaces, Surface Science 8, 342-356 (1967) URL http://www.sciencedirect.com/science/article/ B6TVX-46T3C5Y-29B/1/2da1fa525f4de8a02322ee95cea78ee0
    • (1967) Surface Science , vol.8 , pp. 342-356
    • Van Laar, J.1    Scheer, J.J.2
  • 31
    • 0031700776 scopus 로고    scopus 로고
    • The effect of the iii/v ratio and substrate temperature on the morphology and properties of gan- and aln-layers grown by molecular beam epitaxy on si
    • URL
    • M. A. Sanchez-Garcia, E. Calleja, E. Monroy, F. J. Sanchez, F. Calle, E. Muñoz, R. Beresford: The effect of the iii/v ratio and substrate temperature on the morphology and properties of gan- and aln-layers grown by molecular beam epitaxy on si(111), Journal of Crystal Growth 183, 23-30 (1998) URL http://www.sciencedirect.com/science/ article/B6TJ6-3W8STD4-4/1/ceb4d2577504cc8815a0de8507ed2712
    • (1998) Journal of Crystal Growth , vol.183 , pp. 23-30
    • Sanchez-Garcia, M.A.1    Calleja, E.2    Monroy, E.3    Sanchez, F.J.4    Calle, F.5    Muñoz, E.6    Beresford, R.7
  • 33
    • 0033737136 scopus 로고    scopus 로고
    • Doping and electrical transport in silicon nanowires
    • URL
    • Y. Cui, X. Duan, J. Hu, C. Lieber: Doping and electrical transport in silicon nanowires, Journal of Physical Chemistry B 104, 5213-5216 (2000) URL http://pubs3.acs.org/acs/journals/ doilookup?in$\_$doi=10.1021/jp0009305
    • (2000) Journal of Physical Chemistry B , vol.104 , pp. 5213-5216
    • Cui, Y.1    Duan, X.2    Hu, J.3    Lieber, C.4
  • 35
    • 14544300057 scopus 로고    scopus 로고
    • Comparative structure and optical properties of ga-, in-, and sn-doped zno nanowires synthesized via thermal evaporation
    • URL
    • S. Bae, C. Na, J. Kang, J. Park: Comparative structure and optical properties of ga-, in-, and sn-doped zno nanowires synthesized via thermal evaporation, Journal of Physical Chemistry B 109, 2526-2531 (2005) URL http://pubs3.acs.org/acs/journals/ doilookup?in$\_$doi=10.1021/jp0458708
    • (2005) Journal of Physical Chemistry B , vol.109 , pp. 2526-2531
    • Bae, S.1    Na, C.2    Kang, J.3    Park, J.4
  • 37
    • 33646377436 scopus 로고    scopus 로고
    • Surface segregation and backscattering in doped silicon nanowires
    • doi:10.1103/PhysRevLett.96.166805 URL
    • M. V. Fernández-Serra, C. Adessi, X. Blase: Surface segregation and backscattering in doped silicon nanowires, Physical Review Letters 96 166805 (2006) doi:10.1103/PhysRevLett.96.166805 URL http://link.aps.org/abstract/PRL/v96/e166805
    • (2006) Physical Review Letters , vol.96 , pp. 166805
    • Fernández-Serra, M.V.1    Adessi, C.2    Blase, X.3
  • 38
    • 27544477765 scopus 로고    scopus 로고
    • Growth and optical properties of strained gaas-gaxin1-xp coreshell nanowires
    • URL
    • N. Skold, L. Karlsson, M. Larsson, M.-E. Pistol, W. Seifert, J. Tragardh, L. Samuelson: Growth and optical properties of strained gaas-gaxin1-xp coreshell nanowires, Nano Letters 5, 1943-1947 (2005) URL http://pubs3.acs.org/acs/journals/ doilookup?in$\_$doi=10.1021/nl051304s
    • (2005) Nano Letters , vol.5 , pp. 1943-1947
    • Skold, N.1    Karlsson, L.2    Larsson, M.3    Pistol, M.-E.4    Seifert, W.5    Tragardh, J.6    Samuelson, L.7


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