Atomic transport and chemical stability of nitrogen in ultrathin HfSiON gate dielectrics

Applied Physics A: Materials Science and Processing

Volumn 80, Issue 5, 2005, Pages 1045-1047

  Driemeier, C ^a   Bastos, K P ^a   Soares, G V ^a   Miotti, L ^a   Pezzi, R P ^a   Baumvol, I J R ^b   Punchaipetch, P ^c   Pant, G ^c   Gnade, B E ^c   Wallace, R M ^c  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSITY OF CAXIAS DO SUL   (Brazil)

^c The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; PERMITTIVITY; RESONANCE; TRANSPORT PROPERTIES; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC TRANSPORT; CHEMICAL STABILITY; GATE DIELECTRICS; INTERFACIAL LAYERS; THERMAL PROCESSING;

NITROGEN;

EID: 21044446818     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-3037-8     Document Type: Article

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