Detection of interfacial gas bubbles in wafer bonded silicon with different surface treatments

Journal of the Electrochemical Society

Volumn 156, Issue 1, 2009, Pages

  Horn, Gavin ^a   Gabriel, Markus ^b   Lesniak, Jon ^c   MacKin, Thomas J ^d  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b SUSS MicroTec Lithography GmbH   (United States)

^c Stress Photonics Inc   (United States)

^d CALIFORNIA POLYTECHNIC STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC MICROSCOPES; AMPLITUDE MODULATION; ANNEALING; GASES; MISSILE BASES; PHYSICAL OPTICS; RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; SHEAR STRESS; SILICON; SILICON WAFERS; STRENGTH OF MATERIALS; SURFACE DEFECTS; SURFACE TREATMENT; WAFER BONDING;

ANNEALING TEMPERATURES; BOND INTERFACES; BONDED INTERFACES; GAS BUBBLES; OPTICAL TRAINS; PROCESS YIELDS; RESIDUAL STRESS FIELDS; SCANNING ACOUSTIC MICROSCOPIES; WAFER PRETREATMENT;

PHASE INTERFACES;

EID: 56749153711     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2999376     Document Type: Article

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