Oxygen plasma and warm nitric acid surface activation for low-temperature wafer bonding

Journal of the Electrochemical Society

Volumn 153, Issue 12, 2006, Pages

  Zhang, Xuanxiong ^a   Olbrechts, Benoit ^b   Raskin, Jean Pierre ^b  

^a UNIVERSITY OF SHANGHAI FOR SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; DIFFUSION; INTERFACIAL ENERGY; NITRIC ACID; PLASMA APPLICATIONS; SILICON WAFERS;

BONDING STRENGTH; SILANOL GROUPS; VOID FORMATION; WAFER BONDING;

BONDING;

EID: 33750805940     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2359700     Document Type: Article

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