Wafer bonding across surface steps in the nanometer range

Sensors and Actuators, A: Physical

Volumn 75, Issue 1, 1999, Pages 17-23

  Martini, T ^a   Hopfe, S ^a   MacK, S ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BOND STRENGTH (MATERIALS); INTERFACES (MATERIALS); MATHEMATICAL MODELS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

ELASTOMECHANICAL INSTABILITY; SCANNING ACOUSTIC MICROSCOPY (SAM); SURFACE STEPS;

SENSORS;

EID: 0032641362     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00274-X     Document Type: Article

References (7)

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3. Tong Q.-Y., Gösele U. Semiconductor wafer bonding: recent developments. Materials Chemistry and Physics. 37:1994;103-127.
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5. V.L. Indenbohm, J. Lothe, Elastic Strain Fields and Dislocation Mobility, North-Holland, 1992, p. 54.
6. Day H.C., Allee D.R. Selective area oxidation of silicon with a scanning force microscope. Appl. Phys. Lett. 62:1993;2691-2693.
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