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Applied Physics Letters

Volumn 89, Issue 5, 2006, Pages

Bi-induced acceptor states in ZnO by molecular-beam epitaxy

(6) Xiu, F X a Mandalapu, L J a Yang, Z a Liu, J L a Liu, G F b Yarmoff, J A b

a University of California Riverside (United States)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CONCENTRATION; PHOTOLUMINESCENCE EMISSION; SI (111); ZNO;

DIFFRACTION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON EMISSION; HALL EFFECT; MOLECULAR BEAM EPITAXY; PHASE SEPARATION; PHASE TRANSITIONS; PHOTOLUMINESCENCE; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ZINC OXIDE;

EID: 33748449517 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2243732 Document Type: Article

Times cited : (35)

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