Differential magnetoresistance technique for mobility extraction in ultra-short channel FDSOI transistors

Solid-State Electronics

Volumn 50, Issue 4, 2006, Pages 637-643

  Chaisantikulwat, W ^a   Mouis, M ^a   Ghibaudo, G ^a   Gallon, C ^b   Fenouillet Beranger, C ^c   Maude, D K ^d   Skotnicki, T ^b   Cristoloveanu, S ^a  

^a IMEP LAHC   (France)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

^d GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC RESISTANCE; MAGNETOELECTRIC EFFECTS; MOSFET DEVICES; TRANSISTORS;

DIFFERENTIAL MAGNETORESISTANCE TECHNIQUES; MOBILITY EXTRACTION; SCATTERING MECHANISMS; SERIES RESISTANCES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33646524024     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.03.035     Document Type: Article

References (13)

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