New developments in charge pumping measurements on thin stacked dielectrics

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 3184-3191

  Toledano Luque, María ^a   Degraeve, Robin ^b   Zahid, Mohammed B ^b   Pantisano, Luigi ^b   San Andrés, Enrique ^a   Groeseneken, Guido ^b,c   De Gendt, Stefan ^b,c  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Dielectric films; MOSFETs

Indexed keywords

DIELECTRIC FILMS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); SILICON COMPOUNDS;

BULK TRAPS; CHARGE PUMPING; CHARGE PUMPING MEASUREMENTS; CP TECHNIQUES; DEFECT ENERGY LEVELS; DISCHARGE TIMES; HIGH-K DIELECTRICS; INTERFACE TRAPS; MOSFETS; NEW DEVELOPMENTS; PULSE AMPLITUDES; PULSE BIASES; SPATIAL PROFILES; STACKED DIELECTRICS; TRAP DENSITIES;

GATE DIELECTRICS;

EID: 56549087798     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2005129     Document Type: Article

References (26)

1. International Technology Roadmap for Semiconductors, Semicond. Ind. Assoc., San Jose, CA, 2001. [Online]. Available: http:// public.itrs.net
2. G," Microelectron. Eng., vol. 72, no. 1-4, pp. 267-272, Apr. 2004.
3. E. San Andrés, L. Pantisano, S. Severi, L. Trojman, I. Ferain, M. Toledano-Luque, M. Jurczak, G. Groeseneken, S. De Gendt, and M. Heyns, "Mobility extraction using RFCV for 80 nm MOSFET with 1 nm EOT HfSiON/TiN," Microelectron. Eng., vol. 84, no. 9/10, pp. 1878-1881, Oct. 2007.
4. 2 reliability and yield," in IEDM Tech. Dig., 2003, pp. 935-938.
5. G. Groeseneken, H. E. Maes, N. Beltran, and R. F. de Keersmaecker, "A reliable approach to charge-pumping measurements in MOS transistors," IEEE Trans. Electron Devices, vol. ED-31, no. 1, pp. 42-53, Jan. 1984.
6. M. Declercq and P. Jespers, "Analysis of interface properties in MOS transistors by means of 'charge pumping' measurements," Rev. HF, vol. 9, no. 8, pp. 244-253, 1974.
7. M. B. Zahid, R. Degraeve, T. Kauerauf, G. Groeseneken, and J. F. Zhang, "Investigation of channel-length dependent time-to-breakdown (tBD) with variable frequency charge pumping," in Proc. IEEE 36th Int. Conf. SISC, 2005, pp. 88-89.
8. 2 gate stacks," Appl. Phys. Lett., vol. 88, no. 15, p. 152 907, Apr. 2006.
9. 2 gate stack," IEEE Trans. Electron Devices, vol. 54, no. 6, pp. 1338-1345, Jun. 2007.
10. C. D. Young, D. Heh, S. V. Nadkarni, R. Choi, J. J. Peterson, J. Barnett, B. H. Lee, and G. Bersuker, "Electron trap generation in high-k gate stacks by constant voltage stress," IEEE Trans. Device Mater. Rel., vol. 6, no. 2, pp. 123-131, Jun. 2006.
11. C. Leroux, G. Ghibaudo, X. Garros, G. Reimbold, B. Guillaumot, and F. Martin, "Characterization and modeling of hysteresis phenomena in high K dielectrics," in IEDM Tech. Dig., 2004, pp. 737-740.
12. 2CP)," in Proc. IRPS, 2007, pp. 55-60.
13. F. De Smedt, C. Vinckier, I. Cornelissen, S. De Gendt, and M. Heyns, "A detailed study on the growth of thin oxide layers on silicon using ozonated solutions," J. Elecrochem. Soc., vol. 147, no. 3, pp. 1124-1129, Mar. 2000.
14. J. S. Brugler and P. G. Jespers, "Charge pumping in MOS devices," IEEE Trans. Electron Devices, vol. ED-16, no. 3, pp. 297-302, Mar. 1969.
15. D. Bauza and G. Ghibaudo, "Analytical study of the contribution of fast and slow oxide traps to the charge pumping current in MOS structures," Solid State Electron., vol. 39, no. 4, pp. 563-570, Apr. 1996.
16. W. Shockley and W. T. Read, "Statistics of the recombinations of holes and electrons," Phys. Rev., vol. 87, no. 5, pp. 835-842, Sep. 1952.
17. F. P. Heiman and G. Warfield, "The effects of oxide traps on the MOS capacitance," IEEE Trans. Electron Devices, vol. ED-12, no. 4, pp. 167-178, Apr. 1965.
18. N. Yang, W. K. Henson, J. R. Hauser, and J. J. Wortman, "Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices," IEEE Trans. Electron Devices, vol. 46, no. 7, pp. 1464-1471, Jul. 1999.
19. 2CP)," Microelectron. Eng., vol. 84, no. 9/10, pp. 1951-1955, Sep./Oct. 2007.
20. t instabilities in high-k dielectrics Jahn-Teller effect or oxygen vacancies," IEEE Trans. Device Mater. Rel., vol. 6, no. 2, pp. 132-135, Jun. 2006.
21. 2 gate dielectric stacks," Appl. Phys. Lett., vol. 80, no. 11, pp. 1975-1977, Mar. 2002.
22. S. Zafar, A. Kumar, E. Gusev, and E. Cartier, "Threshold voltage instabilities in high-k gate dielectric stacks," IEEE Trans. Device Mater. Rel., vol. 5, no. 1, pp. 45-63, Mar. 2005.
23. 2 high-dielectric constant gate oxide," Appl. Phys. Lett., vol. 87, no. 18, pp. 183 505-1-183 505-3, Oct. 2005.
24. 2 as charge traps in high-k stacks," Appl. Phys. Lett., vol. 89, no. 8, pp. 82 908-1-82 908-3, Aug. 2006.
25. N. Umezawa, K. Shiraishi, T. Ohno, M. Boero, H. Watanabe, K. Toriid, K. Yamabe, K. Yamada, and Y. Nara, "Unique behavior of F-centers in high-k Hf-based oxides," Phys., B Condens. Matter, vol. 376/377, pp. 392-394, Apr. 2006.
26. 2 gate stack," in IEDM Tech. Dig., 2006, pp. 1-4.