Unique behavior of F-centers in high-k Hf-based oxides

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 392-394

  Umezawa, N ^a   Shiraishi, K ^a,b   Ohno, T ^a   Boero, M ^b   Watanabe, H ^a,c   Chikyow, T ^a   Torii, K ^d   Yamabe, K ^a,b   Yamada, K ^a,e   Nara, Y ^d  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^e WASEDA UNIVERSITY   (Japan)

Author keywords

F center; HfO2; High k dielectric

Indexed keywords

ENERGY GAP; IONIZATION; LIME; MAGNESIA; OXIDES; PHYSICAL PROPERTIES; POSITIVE IONS;

F-CENTERS (DOUBLY OCCUPIED OXYGEN VACANCY VO); FIRST-PRINCIPLES CALCULATIONS; HIGH-K HF-BASED OXIDES; IONIC ROCKSALT OXIDE; NEGATIVE-U BEHAVIOR; OUTWARD RELAXATION;

HAFNIUM COMPOUNDS;

EID: 33645154657     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.101     Document Type: Conference Paper

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