Mobility extraction using RFCV for 80 nm MOSFET with 1 nm EOT HfSiON/TiN

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 1878-1881

  San Andres E ^a,b   Pantisano, L ^b   Severi, S ^b   Trojman, L ^b,c   Ferain, I ^b,c   Toledano Luque, M ^a,b   Jurczak, M ^b   Groeseneken, G ^b,c   De Gendt, S ^b,c   Heyns, M ^b,c  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

HfSiON; Mobility; RFCV; Short channel; Split CV

Indexed keywords

GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOSFET DEVICES; TITANIUM NITRIDE;

DEVICE PARASITICS; MOBILITY BANDS; MOBILITY EXTRACTION; SHORT CHANNELS;

CARRIER MOBILITY;

EID: 34248658290     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.009     Document Type: Article

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