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Journal of Chemical Physics

Volumn 129, Issue 16, 2008, Pages

Band gap change and interfacial reaction in Hf-silicate film grown on Ge(001)

(8) Cho, Y J a Lee, W J b Kim, C Y b Cho, M H b Kim, H c Lee, H J c Moon, D W d Kang, H J a

a Chungbuk National University (South Korea)

b Yonsei University (South Korea)

c Sungkyunkwan University (South Korea)

d Korea Research Institute of Standards and Science (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; ENERGY GAP; FORMING; GALLIUM ALLOYS; GERMANIUM; HAFNIUM; HAFNIUM COMPOUNDS; INTERFACIAL ENERGY; PHOTOELECTRON SPECTROSCOPY; PULSED LASER DEPOSITION; SILICATES; THICK FILMS;

ATOMIC LAYERS; BAND GAPS; GE SURFACES; INTERFACIAL REACTIONS; MEDIUM ENERGY ION SCATTERING SPECTROSCOPIES; SILICATE FILMS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

GERMANIUM; GERMANIUM DIOXIDE; HAFNIUM; SILICATE; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; ELECTRON ENERGY LOSS SPECTROSCOPY; TEMPERATURE;

GERMANIUM; HAFNIUM; SILICATES; SILICON DIOXIDE; SPECTROSCOPY, ELECTRON ENERGY-LOSS; TEMPERATURE;

EID: 55349144871 PISSN: 00219606 EISSN: None Source Type: Journal
DOI: 10.1063/1.3000392 Document Type: Article

Times cited : (12)

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