Integration technology of PC-FUSI (phase controlled FUSI)/HfSiON gate stack for embedded memory application

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 69-72

  Saitoh, Motofumi ^a   Ogura, Takashi ^b   Masuzaki, Koji ^a   Takahashi, Kensuke ^a   Sunamura, Hiroshi ^a   Manabe, Kenzo ^a   Shirai, Hiroki ^b   Tatsumi, Toru ^a   Watanabe, Hirohito ^a  

^a NEC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM COMPOUNDS; INTEGRATION; OPTICAL DESIGN;

EMBEDDED MEMORIES; FABRICATION PROCESSES; GATE STACKS; GATE STRUCTURES; INTEGRATION TECHNOLOGIES; SRAM CELLS;

ELECTRON DEVICES;

EID: 50249138295     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418865     Document Type: Conference Paper

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