Oxidation of hafnium on Si(001): Silicate formation by Si migration

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 23, 2002, Pages 2333091-2333094

  Lee, Jung Ho ^a,b   Miyata, Noriyuki ^b   Kundu, Manisha ^b   Ichikawa, Masakazu ^b,c  

^a Hynix Semiconductor Inc   (South Korea)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM; SILICATE; SILICON;

ARTICLE; CHEMICAL BOND; METAL BINDING; OXIDATION; REFLECTOMETRY; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; SYNTHESIS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0037116096     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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