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Volumn 253, Issue 1-4, 2003, Pages 64-70

High-quality GaN/Si(1 1 1) epitaxial layers grown with various Al0.3Ga0.7N/GaN superlattices as intermediate layer by MOCVD

Author keywords

A3. Metalorganic chemical vapor deposition; B1. AlGaN GaN superlattice; B1. GaN Si(1 1 1)

Indexed keywords

EPITAXIAL GROWTH; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; X RAY DIFFRACTION ANALYSIS;

CRYSTAL QUALITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0038286324 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(03)01015-7 Document Type: Article

Times cited : (62)

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