Improvement in optical properties and surface morphologies of GaN films using low-temperature GaN interlayers

Journal of Crystal Growth

Volumn 263, Issue 1-4, 2004, Pages 176-180

  Tsai, Y L ^a   Gong, J R ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

A1. Crystal morphology; A1. Stresses; B1. Nitrides

Indexed keywords

CRYSTAL STRUCTURE; FILM GROWTH; GALLIUM NITRIDE; MICROSTRUCTURE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; STRAIN; STRESSES; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CRYSTAL MORPHOLOGY; DOUBLE CRYSTAL DIFFRACTOMETRY (DCXRD); MOSAIC STRUCTURES;

SEMICONDUCTING FILMS;

EID: 1242331366     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.008     Document Type: Article

References (15)

1. Gmachl C., Ng H.M., Chu S.-N.G., Cho A.Y. Appl. Phys. Lett. 77:2000;3722.
2. Wu Y.-F., Kapolnek D., Ibbetson J.P., Parikh P., Keller B.P., Mishra U.K. IEEE Trans. Electron. 48:2001;586.
3. Chumbes E.M., Schremer A.T., Smart J.A., Wang Y., MacDonald N.C., Hogue D., Komiak J.J., Lichwalla S.J., Leoni R.E., Shealy J.R. IEEE Trans. Electron. 48:2001;420.
4. Nam O.H., Bremser M.D., Zheleva T.S., Davis R.F. Appl. Phys. Lett. 71:1997;2638.
5. Bourret-Courchesne E.D., Kellermann S., Yu K.M., Benamara M., Liliental- Weber Z., Washburn J., Irvine S.J.C., Stafford A. Appl. Phys. Lett. 77:2000;3562.
6. Benamara M., Liliental-Weber Z., Kellermann S., Swider W., Washburn J., Mazur J., Bourret-Courchesne E.D. J. Crystal Growth. 218:2000;447.
7. Iwaya M., Takeuchi T., Yamaguchi S., Wetzel C., Amano H., Akasaki I. Jpn. J. Appl. Phys. 37:1998;L316.
8. Gong J.R., Yeh C.L., Tsai Y.L., Wang C.L., Lin T.Y., Lan W.H., Shiang Y.D., Cherng Y.T. Mater. Sci. Eng. B. 94:2002;155.
9. Zhang J.P., Wang H.M., Gaevski M.E., Chen C.Q., Fareed Q., Yang J.W., Simin G., Asif Khan M. Appl. Phys. Lett. 80:2002;3542.
10. Kamiyama S., Iwaya M., Hayashi N., Takeuchi T., Amano H., Akasaki I., Watanabe S., Kaneko Y., Yamada N. J. Crystal Growth. 223:2001;83.
11. Waldrip K.E., Han J., Figiel J.J., Zhou H., Makarona E., Nurmikko A.V. Appl. Phys. Lett. 78:2001;3205.
12. Amano H., Iwaya M., Hayashi N., Kashima T., Katsuragawa M., Takeuchi T., Wetzel C., Akasaki I. MRS Internet J. Nitride Semicond. Res. 4S1:1999;G10.1.
13. Tsai Y.L., Wang C.L., Lin P.H., Liao W.T., Gong J.R. Appl. Phys. Lett. 82:2003;31.
14. Rossow U., Hitzel F., Riedel N., Lahmann S., asing J.Bl., Krost A., Ade G., Hinze P., Hangleiter A. J. Crystal Growth. 248:2003;528.
15. Iwaya M., Terao S., Hayashi N., Kashima T., Amano H., Akasaki I. Appl. Surf. Sci. 159/160:2000;405.