Current-voltage characteristics of ungated AlGaN/GaN heterostructures

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 489-494

  Albrecht, J D ^a   Ruden P P ^a   Binari, S C ^b   Ikossi Anastasiou, K ^b   Ancona, M G ^b   Henry, R L ^b   Koleske, D D ^b   Wickenden, A E ^b  

^a University of Minnesota   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; MONTE CARLO METHODS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

CONTACT RESISTANCE; CURRENT SATURATION; ELECTRON VELOCITY SATURATION; EQUILIBRIUM CHANNEL CARRIER CONCENTRATION;

HETEROJUNCTIONS;

EID: 0033335182     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-489     Document Type: Conference Paper

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