Critical evaluation of hard-breakdown based reliability methodologies for ultrathin gate oxides

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 16-23

  Lai, W ^a   Wu, E ^a   Sune J ^b  

^a IBM MICROELECTRONICS   (United States)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Dielectric breakdown; Gate oxide reliability; MOS devices

Indexed keywords

DATA REDUCTION; DIELECTRIC MATERIALS; DIGITAL CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC NETWORK ANALYSIS; PROBABILITY; RELIABILITY; SILICA;

DIELECTRIC BREAKDOWN; GATE OXIDE RELIABILITY;

CMOS INTEGRATED CIRCUITS;

EID: 1642634454     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.12.009     Document Type: Conference Paper

References (17)

1. Wu E., Suñé J., Lai W., Vayshenker A., Nowak E., Harmon D. Microelectron. Reliab. 43:2003;1175-1184.
2. Kaczer B., Degraeve R., Rasras M., Van de Mieroop K., Roussel P.J., Groeseneken G. IEEE Trans. Electron Dev. 49:2002;500-506.
3. Linder B.P., Lombardo S., Stathis J.H., Vayshenker A., Frank D.J. IEEE Electron Dev. Lett. 23:2002;661-663.
4. Monsieur F., et al. Proc. Int. Reliab. Phys. Symp. 2002;45-54.
5. Hosoi T., Lo Re P., Kamakura Y., Taniguchi K. Int. Electron Dev. Meeting Technol. Digest. 2002;155-158.
6. Okada K. Jpn. J. Appl. Phys. 36:1997;1443.
7. Suñé J., Wu E., Jiménez D., Vollertsen R.P., Miranda E. Int. Electron Dev. Meeting Technol. Digest. 2001;117-120.
8. Suñé J., Wu E.Y. Int. Electron Dev. Meeting Technol. Digest. 2002;147-150.
9. Alam M., Smith R., Weir B.E., Silverman P. Nature. 420:2002;378.
10. Alam M.A., Smith R.K., Weir B.E., Silverman P.J. Int. Electron Dev. Meeting Technol. Digest. 2002;151-154.
11. Alam M.A., Weir B.E., Silverman P.J. IEEE Trans. Electron Dev. 49:2002;239-246.
12. Miranda E., Suñé J., Rodríguez R., Nafría M., Aymerich X. IEEE Electron Dev. Lett. 20:1999;265-267.
13. Schmitz J., Tuinhout H.P., Kretschmann H.J., Woerlee P.H. IEEE Trans. Dev. Mat. Rel. 1:2001;150-157.
14. Roussel P.J., et al. Int. Reliab. Phys. Symp. 2001;386-392.
15. Wu E.Y., Nowak E., Aitken J., Abadeer W., Han L.K., Lo S. Int. Electron Dev. Meeting Technol. Digest. 1998;187-190.
16. Rodríguez R., Stathis J.H., Linder B.P. IEEE Electron Dev. Lett. 24:2003;114-116.
17. Weir B., Alam M., Silverman P. Microelectron. Eng. 59:2001;17-23.