Complex patterning by vertical interchange atom manipulation using atomic force microscopy

Science

Volumn 322, Issue 5900, 2008, Pages 413-417

  Sugimoto, Yoshiaki ^a   Pou, Pablo ^b   Custance, Oscar ^c   Jelinek, Pavel ^d   Abe, Masayuki ^a,e   Perez, Ruben ^b   Morita, Seizo ^a  

^a OSAKA UNIVERSITY   (Japan)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d INSTITUTE OF PHYSICS   (Czech Republic)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NANOMATERIAL; SILICON; TIN;

ATOMIC FORCE MICROSCOPY; NUMERICAL METHOD; PATTERN RECOGNITION; SURFACE ENERGY;

ARTICLE; ATOM; ATOMIC FORCE MICROSCOPY; CALCULATION; CHEMICAL INTERACTION; ENERGY; FORCE; MATHEMATICAL ANALYSIS; PRIORITY JOURNAL; SEMICONDUCTOR; VARIANCE;

EID: 54249118705     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1160601     Document Type: Article

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30. S.Y., O.C., M.A., and S.M. acknowledge support from grants in aid for scientific research from the Ministry of Education, Culture, Sports, Science and Technology (MEXT), JST, Handai Frontier Research Center, the Project Atomic Technology funded by MEXT, and Global Center of Excellence program "Center for Electronic Devices Innovation." O.C. also acknowledges support from the Air Force Office of Scientific Research-Asian Office of Aerospace Research and Development. The work of Y.S. is supported by the Frontier Research Base for Global Young Researchers funded by MEXT. P.P. and R.P. acknowledge the support of Ministerio de Educación y Ciencia (Spain) and computer time provided by Red Española de Supercomputación at the Barcelona Supercomputing Center. P.J. acknowledges the support of Grantová Agentura Akademie Věd (Czech Republic)