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Volumn 46, Issue 1, 2007, Pages 24-27
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Large Coulomb-blockade oscillations and negative differential conductance in silicon single-electron transistors with [100]- and [110]-directed channels at room temperature
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Author keywords
MOSFET; SET; Silicon quantum dot; Single electron transistor
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Indexed keywords
COULOMB BLOCKADE;
ELECTRIC CONDUCTANCE;
ELECTRON TRANSITIONS;
MOSFET DEVICES;
SILICON COMPOUNDS;
COULOMB-BLOCKADE OSCILLATIONS;
PEAK-TO-VALLEY CURRENT RATIO;
SILICON QUANTUM DOTS;
SINGLE ELECTRON TRANSISTORS;
TRANSISTORS;
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EID: 34547894772
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.46.24 Document Type: Article |
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Times cited : (6)
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References (18)
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