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Volumn 74, Issue 8, 1999, Pages 1126-1128

On the origin of tunneling barriers in silicon single electron and single hole transistors

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[No Author keywords available]

Indexed keywords


EID: 0001171204     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123464     Document Type: Article
Times cited : (73)

References (11)
  • 7
    • 0042048996 scopus 로고    scopus 로고
    • Transport properties of two-dimensional electron gas and hole gas in the same AlGaAs/GaAs interface are reported in
    • Transport properties of two-dimensional electron gas and hole gas in the same AlGaAs/GaAs interface are reported in Y. Hirayama, J. Appl. Phys. 80, 588 (1996);
    • (1996) J. Appl. Phys. , vol.80 , pp. 588
    • Hirayama, Y.1
  • 8
    • 0000851152 scopus 로고    scopus 로고
    • the interaction between electrons and holes generated by photons in a single electron transistor are described in
    • the interaction between electrons and holes generated by photons in a single electron transistor are described in A. Fujiwara, Y. Takahashi, and K. Murase, Phys. Rev. Lett. 78, 1532 (1997).
    • (1997) Phys. Rev. Lett. , vol.78 , pp. 1532
    • Fujiwara, A.1    Takahashi, Y.2    Murase, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.