SCOPUS 정보 검색 플랫폼

Volumn 91, Issue 10 I, 2002, Pages 6725-6728

Observation of current staircase due to large quantum level spacing in a silicon single-electron transistor with low parasitic series resistance

(2) Saitoh, Masumi a Hiramoto, Toshiro a

a INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION ENERGY; LOW TEMPERATURES; LOW-PARASITIC; NUMERICAL CALCULATION; PARASITIC SERIES RESISTANCE; QUANTUM LEVELS; ROOM TEMPERATURE; SILICON SINGLE-ELECTRON TRANSISTORS; SINGLE ELECTRON; ULTRA-SMALL;

CAPACITANCE MEASUREMENT; ELECTRIC RESISTANCE; POINT CONTACTS;

STAIRS;

EID: 0037094925 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1471928 Document Type: Article

Times cited : (26)

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