Effect of Ho content on microstructure and ferroelectric properties of Bi4-xHoxTi3O12 thin films prepared by sol-gel method

Journal of the American Ceramic Society

Volumn 91, Issue 10, 2008, Pages 3280-3284

  Guo, Dongyun ^a,b   Zhang, Lianmeng ^a   Li, Meiya ^b   Liu, Jun ^b   Yu, Benfang ^b  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^b WUHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC PROPERTIES;

HOLMIUM;

EID: 53349153674     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2008.02664.x     Document Type: Article

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