Ferroelectric properties of Bi4-xLaxTi3O12 (x = 0, 0.75) thin films prepared by sol-gel method

Materials Science and Engineering: B

Volumn 142, Issue 2-3, 2007, Pages 135-138

  Guo, Dong Yun ^a   Li, Mei Ya ^a   Liu, Jun ^a   Fu, Linjie ^a   Wang, Jing ^a   Yu, Ben Fang ^a   Yang, Bin ^b  

^a WUHAN UNIVERSITY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Bi3.25La0.75Ti3O12 thin film; Bi4Ti3O12 thin film; Ferroelectric properties; La doping; Sol gel method

Indexed keywords

BISMUTH; BISMUTH COMPOUNDS; CRYSTAL STRUCTURE; DOPING (ADDITIVES); FATIGUE OF MATERIALS; MICROSTRUCTURE; PEROVSKITE; SOL-GEL PROCESS;

DOPING EFFECTS; FERROELECTRIC PROPERTIES;

THIN FILMS;

EID: 34548312385     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.07.002     Document Type: Article

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