Ferroelectric properties of Bi3.6Ho0.4Ti 3O12 thin films prepared by sol-gel method

Applied Physics Letters

Volumn 91, Issue 23, 2007, Pages

  Guo, Dongyun ^a   Li, Meiya ^c   Wang, Jing ^c   Liu, Jun ^c   Yu, Benfang ^c   Yang, Bin ^b  

^a WUHAN UNIVERSITY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC LOSSES; FATIGUE OF MATERIALS; MICROSTRUCTURE; PERMITTIVITY; SOL-GEL PROCESS; THIN FILMS;

AURIVILLIUS STRUCTURE; BISMUTH TITANATE;

FERROELECTRIC MATERIALS;

EID: 36849000213     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2821836     Document Type: Article

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