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Volumn 51, Issue 1, 2008, Pages 10-15

Preparation and ferroelectric properties of Bi3.4Ce 0.6Ti3O12 thin films grown by sol-gel method

Author keywords

Bi3.4Ce0.6Ti3O12 thin film; Dielectric; Fatigue; Ferroelectric property; Leakage current; Sol gel method

Indexed keywords

ATOMIC FORCE MICROSCOPY; BISMUTH COMPOUNDS; FATIGUE OF MATERIALS; FERROELECTRICITY; LEAKAGE CURRENTS; PEROVSKITE; SOL-GEL PROCESS; X RAY DIFFRACTION;

EID: 37649019925     PISSN: 10069321     EISSN: 1862281X     Source Type: Journal    
DOI: 10.1007/s11431-007-0049-6     Document Type: Article
Times cited : (5)

References (11)
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  • 2
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    • 12 thin films grown at low substrate temperatures
    • 12 thin films grown at low substrate temperatures. Thin Solid Films, 1999, 348: 294-298
    • (1999) Thin Solid Films , vol.348 , pp. 294-298
    • Yamaguchi, M.1    Nagatomo, T.2
  • 3
    • 0033554712 scopus 로고    scopus 로고
    • Lanthanum-substituted bismuth titanate for use in non-volatile memories
    • Park B H, Kang B S, Bu S D, et al. Lanthanum-substituted bismuth titanate for use in non-volatile memories. Nature, 1999, 401: 682-684
    • (1999) Nature , vol.401 , pp. 682-684
    • Park, B.H.1    Kang, B.S.2    Bu, S.D.3
  • 5
    • 0037451246 scopus 로고    scopus 로고
    • 12 films: A candidate for lead-free thin-film piezoelectrics
    • 12 films: A candidate for lead-free thin-film piezoelectrics. Appl Phys Lett, 2003, 82: 1760-1762
    • (2003) Appl Phys Lett , vol.82 , pp. 1760-1762
    • Maiwa, H.1    Iizawa, N.2    Togawa, D.3
  • 6
    • 0038003929 scopus 로고    scopus 로고
    • Ferroelectric properties and crystal structure of praseodymium-modified bismuth titanate
    • Chon U, Shim J S, Jang H M. Ferroelectric properties and crystal structure of praseodymium-modified bismuth titanate. J Appl Phys, 2003, 93: 4769-4775
    • (2003) J Appl Phys , vol.93 , pp. 4769-4775
    • Chon, U.1    Shim, J.S.2    Jang, H.M.3
  • 9
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    • 0042029699 scopus 로고    scopus 로고
    • Large remanent polarization of cerium-modified bismuth-titanate thin films for ferroelectric random access memories
    • Kim K T, Kim C I, Kang D H, et al. Large remanent polarization of cerium-modified bismuth-titanate thin films for ferroelectric random access memories. J Vac Sci Tech A, 2003, 21: 1376-1380
    • (2003) J Vac Sci Tech A , vol.21 , pp. 1376-1380
    • Kim, K.T.1    Kim, C.I.2    Kang, D.H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.