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Science in China, Series E: Technological Sciences

Volumn 50, Issue 1, 2007, Pages 1-6

Ferroelectric properties of Bi3.25La0.75Ti 3O12 thin films prepared by sol-gel method

(8) Guo, Dongyun a Li, Meiya a Pei, Ling a Yu, Benfang a Wu, Gengzhu a Zhao, Xingzhong a Wang, Yunbo b Yu, Jun b

a WUHAN UNIVERSITY (China)

b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

Bi3.25La0.75Ti3O12 thin film; Fatigue; Ferroelectric properties; Leakage current; Sol gel method

Indexed keywords

ATOMIC FORCE MICROSCOPY; BISMUTH COMPOUNDS; FATIGUE OF MATERIALS; FERROELECTRICITY; LEAKAGE CURRENTS; MORPHOLOGY; PEROVSKITE; SOL-GELS; X RAY DIFFRACTION;

BI3.25LA0.75TI3O12 THIN FILM; DENSE MICROSTRUCTURE; FERROELECTRIC PROPERTIES; PEROVSKITE PHASE;

THIN FILMS;

EID: 33847200477 PISSN: 10069321 EISSN: 1862281X Source Type: Journal
DOI: 10.1007/s11431-007-0011-7 Document Type: Article

Times cited : (11)

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