Ferroelectric properties of Bi3.25 Sm0.75 V0.02 T2.98 O12 thin film at elevated temperature

Applied Physics Letters

Volumn 90, Issue 22, 2007, Pages

  Cheng, Z X ^a   Wang, X L ^a   Dou, S X ^a   Ozawa, K ^b   Kimura, H ^b  

^a UNIVERSITY OF WOLLONGONG   (Australia)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; FERROELECTRICITY; HIGH TEMPERATURE EFFECTS; OXYGEN VACANCIES; POLARIZATION; PULSED LASER DEPOSITION;

DOMAIN PINNING; ELECTRICAL POLARIZATION; FERROELECTRIC BEHAVIORS;

THIN FILMS;

EID: 34249889552     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2743910     Document Type: Article

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