ArF resist-friendly etching technology

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 5, 2008, Pages 1775-1781

  Hayashi, Toshio ^a,b   Morikawa, Yasuhiro ^a   Suu, Koukou ^a   Ishikawa, Michio ^a  

^a ULVAC INC   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ETCHING; FLUORINE; IODINE; IODINE COMPOUNDS; LIGHT WATER REACTORS; ORGANIC POLYMERS; ROUGHNESS MEASUREMENT;

ETCHED SURFACES; ETCHING CONDITIONS; FLUORINE ATOMS; FLUX DENSITIES; HIGH-ENERGY IONS; IODINE ATOMS; ION ENERGIES; LINE-EDGE ROUGHNESS; LINE-WIDTH ROUGHNESS; PERFLUOROCARBON; PLASMA RESISTIVITY;

ATOMS;

EID: 53349122309     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2975198     Document Type: Article

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