Investigations of surface reactions in neutral loop discharge plasma for high-aspect-ratio SiO2 etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 3, 2003, Pages 1429-1434

  Morikawa, Yasuhiro ^a   Chen, Wei ^a   Hayashi, Toshio ^a   Uchida, Taijiro ^a  

^a ULVAC INC   (Japan)

Author keywords

CF polymer; HFC 152a; HFE 216; Highly selectivity; NLD plasma; RIE lag; SiO2 etching

Indexed keywords

CHEMICAL BONDS; COMPOSITION; FLUOROCARBONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PHOTORESISTS; POLYMERS; SILICA; SURFACE REACTIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

NEUTRAL LOOP DISCHARGE (NLD) PLASMAS;

PLASMA ETCHING;

EID: 0038629325     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1429     Document Type: Article

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