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Volumn 55, Issue 4, 2008, Pages 2197-2204

Random telegraph signals in proton irradiated CCDs and APS

Author keywords

Image sensors; Proton radiation effects; Radiation effects; Satellite applications

Indexed keywords

ACTIVATION ENERGY; CHARGE COUPLED DEVICES; IMAGE SENSORS; MOSFET DEVICES; PROTONS; SENSOR NETWORKS; TELEGRAPH;

EID: 53349091787     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2000764     Document Type: Conference Paper
Times cited : (41)

References (26)
  • 1
    • 0027841912 scopus 로고
    • Random telegraph signals from proton-irradiated CCDs
    • Dec
    • I.H. Hopkins and G. R. Hopkinson, "Random telegraph signals from proton-irradiated CCDs," IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1567-1574, Dec. 1993.
    • (1993) IEEE Trans. Nucl. Sci , vol.40 , Issue.6 , pp. 1567-1574
    • Hopkins, I.H.1    Hopkinson, G.R.2
  • 2
    • 0029492479 scopus 로고
    • Further measurements of random telegraph signals in proton-irradiated CCDs
    • Dec
    • I. H. Hopkins and G. R. Hopkinson, "Further measurements of random telegraph signals in proton-irradiated CCDs," IEEE Trans. Nucl. Sci., vol. 42, no. 6, pp. 2074-2081, Dec. 1995.
    • (1995) IEEE Trans. Nucl. Sci , vol.42 , Issue.6 , pp. 2074-2081
    • Hopkins, I.H.1    Hopkinson, G.R.2
  • 3
    • 33748368731 scopus 로고    scopus 로고
    • Measurements of random telegraph signal in CCDs irradiated with protons and neutrons
    • Aug
    • T. Nuns, G. Quadri, J.-P. David, O. Gilard, and N. Boudou, "Measurements of random telegraph signal in CCDs irradiated with protons and neutrons," IEEE Trans. Nucl. Sci., vol. 53, no. 4, pp. 1764-1771, Aug. 2006.
    • (2006) IEEE Trans. Nucl. Sci , vol.53 , Issue.4 , pp. 1764-1771
    • Nuns, T.1    Quadri, G.2    David, J.-P.3    Gilard, O.4    Boudou, N.5
  • 4
    • 34548080556 scopus 로고    scopus 로고
    • Annealing of protoninduced random telegraph signal in CCDs
    • Aug
    • T. Nuns, G. Quadri, J.-P. David, and O. Gilard, "Annealing of protoninduced random telegraph signal in CCDs," IEEE Trans. Nucl. Sci., vol. 54, no. 4, pp. 1120-1128, Aug. 2007.
    • (2007) IEEE Trans. Nucl. Sci , vol.54 , Issue.4 , pp. 1120-1128
    • Nuns, T.1    Quadri, G.2    David, J.-P.3    Gilard, O.4
  • 5
    • 1242310297 scopus 로고    scopus 로고
    • Single particle dark current spikes induced in CCDs by high energy neutrons
    • Dec
    • A. M. Chugg, R. Jones, M. J. Moutrie, J. R. Armstrong, D. B. S. King, and N. Moreau, "Single particle dark current spikes induced in CCDs by high energy neutrons," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 2011-2017, Dec. 2003.
    • (2003) IEEE Trans. Nucl. Sci , vol.50 , Issue.6 , pp. 2011-2017
    • Chugg, A.M.1    Jones, R.2    Moutrie, M.J.3    Armstrong, J.R.4    King, D.B.S.5    Moreau, N.6
  • 6
    • 0036464521 scopus 로고    scopus 로고
    • Random telegraph signals in a radiation-hardened CMOS active pixel sensor
    • Feb
    • J. Boegaerts, B. Dierickx, and R. Mertens, "Random telegraph signals in a radiation-hardened CMOS active pixel sensor," IEEE Trans. Nucl. Sci., vol. 49, no. 1, pp. 249-257, Feb. 2002.
    • (2002) IEEE Trans. Nucl. Sci , vol.49 , Issue.1 , pp. 249-257
    • Boegaerts, J.1    Dierickx, B.2    Mertens, R.3
  • 8
    • 53349141352 scopus 로고    scopus 로고
    • Low temperature alpha particle irradiation of a STAR1000 CMOS APS
    • Aug
    • G. R. Hopkinson and A. Mohammadzadeh, "Low temperature alpha particle irradiation of a STAR1000 CMOS APS," IEEE Trans. Nucl. Sci., vol. 55, no. 4, pp. XXX-XXX, Aug. 2008.
    • (2008) IEEE Trans. Nucl. Sci , vol.55 , Issue.4
    • Hopkinson, G.R.1    Mohammadzadeh, A.2
  • 9
    • 0028711773 scopus 로고
    • A comparison of Monte Carlo and analytical treatments of displacement damage in Si microvolumes
    • Dec
    • C. J. Dale, L. Chen, P. J. McNulty, P. W. Marshall, and E. A. Burke, "A comparison of Monte Carlo and analytical treatments of displacement damage in Si microvolumes," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 1974-1983, Dec. 1994.
    • (1994) IEEE Trans. Nucl. Sci , vol.41 , Issue.6 , pp. 1974-1983
    • Dale, C.J.1    Chen, L.2    McNulty, P.J.3    Marshall, P.W.4    Burke, E.A.5
  • 10
    • 1242265275 scopus 로고    scopus 로고
    • Comparison of CCD damage due to 10 and 60 MeV protons
    • Dec
    • G. R. Hopkinson and A. Mohammadzadeh, "Comparison of CCD damage due to 10 and 60 MeV protons," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 1960-1967, Dec. 2003.
    • (2003) IEEE Trans. Nucl. Sci , vol.50 , Issue.6 , pp. 1960-1967
    • Hopkinson, G.R.1    Mohammadzadeh, A.2
  • 11
    • 53349124627 scopus 로고    scopus 로고
    • A Method for Automated Random Telegraph Signal Detection and Characterization in Image
    • submitted for publication
    • V. Goiffon, P. Magnan, G. Hopkinson, and L. Boucher, A Method for Automated Random Telegraph Signal Detection and Characterization in Image Sensors, submitted for publication.
    • Sensors
    • Goiffon, V.1    Magnan, P.2    Hopkinson, G.3    Boucher, L.4
  • 12
    • 36849057036 scopus 로고    scopus 로고
    • Influence of terrestrial cosmic rays on the reliability of CCD image sensors-part I: Experiments at room temperature
    • Dec
    • A. J. P. Theuwissen, "Influence of terrestrial cosmic rays on the reliability of CCD image sensors-part I: Experiments at room temperature," IEEE Trans. Electron Dev., vol. 54, no. 12, pp. 3260-3266, Dec. 2007.
    • (2007) IEEE Trans. Electron Dev , vol.54 , Issue.12 , pp. 3260-3266
    • Theuwissen, A.J.P.1
  • 13
    • 8344249599 scopus 로고    scopus 로고
    • Radiation effects in a radiation tolerant CMOS active pixel sensor
    • Oct
    • G. R. Hopkinson, A. Mohammadzadeh, and R. Harboe-Sorenson, "Radiation effects in a radiation tolerant CMOS active pixel sensor," IEEE Trans. Nucl. Sci., vol. 51, no. 5, pp. 2753-2762, Oct. 2004.
    • (2004) IEEE Trans. Nucl. Sci , vol.51 , Issue.5 , pp. 2753-2762
    • Hopkinson, G.R.1    Mohammadzadeh, A.2    Harboe-Sorenson, R.3
  • 14
    • 0032403659 scopus 로고    scopus 로고
    • CMOS active pixel image sensor with CCD performance
    • G. Meynants, B. DierickX, and D. Scheffer, "CMOS active pixel image sensor with CCD performance," Proc SPIE, vol. 3410, pp. 68-76, 1998.
    • (1998) Proc SPIE , vol.3410 , pp. 68-76
    • Meynants, G.1    DierickX, B.2    Scheffer, D.3
  • 16
    • 33846298000 scopus 로고    scopus 로고
    • A framework for understanding displacement damage mechanisms in irradiated silicon devices
    • Dec
    • J. R. Srour and J. W. Palko, "A framework for understanding displacement damage mechanisms in irradiated silicon devices," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3610-3620, Dec. 2006.
    • (2006) IEEE Trans. Nucl. Sci , vol.53 , Issue.6 , pp. 3610-3620
    • Srour, J.R.1    Palko, J.W.2
  • 17
    • 0001478514 scopus 로고    scopus 로고
    • Bulk damage effects in irradiated silicon detectors due to clustered divacancies
    • Jul
    • K. Gill, G. Hall, and B. MacEvoy, "Bulk damage effects in irradiated silicon detectors due to clustered divacancies," J. Appl. Phys., vol. 82, no. 1, pp. 126-136, Jul. 1997.
    • (1997) J. Appl. Phys , vol.82 , Issue.1 , pp. 126-136
    • Gill, K.1    Hall, G.2    MacEvoy, B.3
  • 18
    • 23044521296 scopus 로고    scopus 로고
    • Metastable and bistable defects in silicon
    • B. N. Mukashev, K. A. Abdullin, and Y. V. Gorelkinskii, "Metastable and bistable defects in silicon," Physics-Uspekhi, vol. 43, no. 2, pp. 139-150, 2000.
    • (2000) Physics-Uspekhi , vol.43 , Issue.2 , pp. 139-150
    • Mukashev, B.N.1    Abdullin, K.A.2    Gorelkinskii, Y.V.3
  • 19
    • 0000682830 scopus 로고    scopus 로고
    • Valence and atomic size dependent exchange barriers in vacancy-mediated dopant diffusion
    • Jul
    • J. S. Nelson, P. A. Schultz, and A. F. Wright, "Valence and atomic size dependent exchange barriers in vacancy-mediated dopant diffusion," App. Phys. Lett., vol. 73, no. 2, pp. 247-249, Jul. 1998.
    • (1998) App. Phys. Lett , vol.73 , Issue.2 , pp. 247-249
    • Nelson, J.S.1    Schultz, P.A.2    Wright, A.F.3
  • 21
    • 33745451611 scopus 로고    scopus 로고
    • Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories
    • T. Umeda, K. Okonogi, S. Tsukada, K. Hamada, S. Fujieda, and Y. Mochizuki, "Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories," Appl. Phys. Lett., vol. 88, pp. 243504-1-243504-3, 2006.
    • (2006) Appl. Phys. Lett , vol.88
    • Umeda, T.1    Okonogi, K.2    Tsukada, S.3    Hamada, K.4    Fujieda, S.5    Mochizuki, Y.6
  • 23
  • 24
    • 0036807527 scopus 로고    scopus 로고
    • Neutron-irradiation-induced effects caused by divacancy clusters with a tetravacancy core in float-zone silicon
    • P. F. Ermolov, D. E. Karmanov, A. K. Leflat, V. M. Manankov, M. M. Merkin, and E. K. Shabalina, "Neutron-irradiation-induced effects caused by divacancy clusters with a tetravacancy core in float-zone silicon," Semiconductors, vol. 36, no. 10, pp. 1114-1122, 2002.
    • (2002) Semiconductors , vol.36 , Issue.10 , pp. 1114-1122
    • Ermolov, P.F.1    Karmanov, D.E.2    Leflat, A.K.3    Manankov, V.M.4    Merkin, M.M.5    Shabalina, E.K.6
  • 26
    • 0035121083 scopus 로고    scopus 로고
    • Deeplevel transient spectroscopy of silicon detectors after 24 GeV proton irradiation and 1 MeV neutron irradiation
    • M. Ahmed, S. J. Watts, J. Matheson, and A. Holmes-Seidle, "Deeplevel transient spectroscopy of silicon detectors after 24 GeV proton irradiation and 1 MeV neutron irradiation," Nucl. Instrum Meth. Phys. Res., A, vol. 457, pp. 588-594, 2001.
    • (2001) Nucl. Instrum Meth. Phys. Res., A , vol.457 , pp. 588-594
    • Ahmed, M.1    Watts, S.J.2    Matheson, J.3    Holmes-Seidle, A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.