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Volumn 552, Issue 1-2, 2005, Pages 71-76

Effect of proton fluence on point defect formation in epitaxial silicon for radiation detectors

Author keywords

Epitaxial silicon; HRPITS; Irradiation defects

Indexed keywords

ACTIVATION ENERGY; CONCENTRATION (PROCESS); PROTON IRRADIATION; RADIATION DETECTORS; SILICON; SPECTROSCOPIC ANALYSIS;

EID: 26444498632     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.06.009     Document Type: Conference Paper
Times cited : (8)

References (21)
  • 3
    • 20644449184 scopus 로고    scopus 로고
    • Radiation hardness of thin high resistivity FZ silicon detectors in comparison to epitaxial silicon devices
    • 5-7 May CERN, Geneva, Switzerland
    • E. Fretwurst, et al., Radiation hardness of thin high resistivity FZ silicon detectors in comparison to epitaxial silicon devices, Presented on the Fourth RD50 Workshop, 5-7 May 2004, CERN, Geneva, Switzerland.
    • (2004) Fourth RD50 Workshop
    • Fretwurst, E.1
  • 5
    • 26444561849 scopus 로고    scopus 로고
    • Book of extended abstracts
    • Stare Jablonki, Poland, 19-22 April
    • M. Pawlowski, Book of Extended Abstracts, Eighth Electron Technology Conference, Stare Jablonki, Poland, 19-22 April 2004, pp. 127-128.
    • (2004) Eighth Electron Technology Conference , pp. 127-128
    • Pawlowski, M.1
  • 12
    • 26444553325 scopus 로고    scopus 로고
    • Annealing behaviour of defects in irradiated MCZ- and DOFZ-Si detector materials
    • 5-7 May CERN, Geneva, Switzerland
    • M. Mikelsen, et al., Annealing behaviour of defects in irradiated MCZ- and DOFZ-Si detector materials, Presented on the Fourth RD50 Workshop, 5-7 May 2004, CERN, Geneva, Switzerland.
    • (2004) Fourth RD50 Workshop
    • Mikelsen, M.1
  • 14
    • 26444476442 scopus 로고    scopus 로고
    • 60-γ irradiation
    • 14-16 October Florence, Italy
    • 60-γ irradiation, Presented on the Fifth RD50 Workshop, 14-16 October 2004, Florence, Italy.
    • (2004) Fifth RD50 Workshop
    • Pintilie, I.1
  • 18
    • 26444491068 scopus 로고    scopus 로고
    • Effect of fluence on defect structure of proton-irradiated high-resistivity silicon
    • 5-7 May CERN, Geneva, Switzerland
    • P. Kaminski, et al., Effect of fluence on defect structure of proton-irradiated high-resistivity silicon, Presented on the Fourth RD50 Workshop, 5-7 May 2004, CERN, Geneva, Switzerland.
    • (2004) Fourth RD50 Workshop
    • Kaminski, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.