Effects of clustering on the properties of defects in neutron irradiated silicon

Journal of Applied Physics

Volumn 102, Issue 4, 2007, Pages

  Fleming, R M ^a   Seager, C H ^a   Lang, D V ^a   Cooper, P J ^a   Bielejec, E ^a   Campbell, J M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BIPOLAR TRANSISTORS; CLUSTER ANALYSIS; COMPUTER SIMULATION; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; NEUTRON IRRADIATION;

CAPTURE DYNAMICS; ELECTROSTATIC BAND-BENDING APPROACH; ELECTROSTATIC MODELING; TEMPERATURE ELECTRON CAPTURE MEASUREMENT;

SILICON;

EID: 34548433082     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2769783     Document Type: Article

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