메뉴 건너뛰기




Volumn 53, Issue 4, 2006, Pages 1764-1771

Measurements of random telegraph signal in CCDs irradiated with protons and neutrons

Author keywords

[No Author keywords available]

Indexed keywords

IMAGE SENSORS; NEUTRON IRRADIATION; PROTON IRRADIATION; RADIO TELEGRAPH; SIGNAL PROCESSING; THERMAL EFFECTS;

EID: 33748368731     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.876509     Document Type: Conference Paper
Times cited : (21)

References (15)
  • 1
    • 0005934199 scopus 로고
    • Experimental evaluation of high speed CCD imager effects using Co60 and proton radiation
    • Jul. 21
    • T. L. Miller and D. A. Thompson, "Experimental evaluation of high speed CCD imager effects using Co60 and proton radiation," in IEEE Radiation Effects Data Workshop, Jul. 21, 1993.
    • (1993) IEEE Radiation Effects Data Workshop
    • Miller, T.L.1    Thompson, D.A.2
  • 3
    • 0034451544 scopus 로고    scopus 로고
    • Radiation effects in a CMOS active pixel sensor
    • Dec.
    • G. R. Hopkinson, "Radiation effects in a CMOS active pixel sensor," IEEE Trans. Nucl. Sci., vol. NS-47, no. 6, pp. 2480-2484, Dec. 2000.
    • (2000) IEEE Trans. Nucl. Sci. , vol.NS-47 , Issue.6 , pp. 2480-2484
    • Hopkinson, G.R.1
  • 4
    • 0027841912 scopus 로고
    • Random telegraph signals from proton-irradiated CCDs
    • Dec.
    • I. H. Hopkins and G. R. Hopkinson, "Random telegraph signals from proton-irradiated CCDs," IEEE Trans. Nucl. Sci., vol. NS-40, no. 6, pp. 1567-1574, Dec. 1993.
    • (1993) IEEE Trans. Nucl. Sci. , vol.NS-40 , Issue.6 , pp. 1567-1574
    • Hopkins, I.H.1    Hopkinson, G.R.2
  • 5
    • 0029492479 scopus 로고
    • Further measurements of random telegraph signals in proton irradiated CCDs
    • Dec.
    • I. H. Hopkins and G. R. Hopkinson, "Further measurements of random telegraph signals in proton irradiated CCDs," IEEE Trans. Nucl. Sci., vol. NS-46, no. 6, pp. 2074-2081, Dec. 1995.
    • (1995) IEEE Trans. Nucl. Sci. , vol.NS-46 , Issue.6 , pp. 2074-2081
    • Hopkins, I.H.1    Hopkinson, G.R.2
  • 6
    • 0036464521 scopus 로고    scopus 로고
    • Random telegraph signals in a radiation-hardened CMOS active pixel sensor
    • Feb.
    • J. Boegaerts, B. Dierickx, and R. Mertens, "Random telegraph signals in a radiation-hardened CMOS active pixel sensor," IEEE Trans. Nucl. Sci., vol. NS-49, no. 1, pp. 249-257, Feb. 2002.
    • (2002) IEEE Trans. Nucl. Sci. , vol.NS-49 , Issue.1 , pp. 249-257
    • Boegaerts, J.1    Dierickx, B.2    Mertens, R.3
  • 7
    • 0034450437 scopus 로고    scopus 로고
    • Displacement damage effects in InGaAs detectors: Experimental results and semi-empirical model prediction
    • Dec.
    • S. Barde, R. Ecoffet, J. Costeraste, A. Meygret, and X. Hugon, "Displacement damage effects in InGaAs detectors: Experimental results and semi-empirical model prediction," IEEE Trans. Nucl. Sci., vol. NS-47, no. 6, pp. 2466-2472, Dec. 2000.
    • (2000) IEEE Trans. Nucl. Sci. , vol.NS-47 , Issue.6 , pp. 2466-2472
    • Barde, S.1    Ecoffet, R.2    Costeraste, J.3    Meygret, A.4    Hugon, X.5
  • 8
    • 0028419718 scopus 로고
    • Random telegraph signals in accumulation-mode SOI/nMOSFET's
    • Apr.
    • M.-H. Tsai, B. Zhang, T.-P. Ma, and L. K. Wang, "Random telegraph signals in accumulation-mode SOI/nMOSFET's," IEEE Electron Devices Lett., vol. 15, no. 4, pp. 135-137, Apr. 1994.
    • (1994) IEEE Electron Devices Lett. , vol.15 , Issue.4 , pp. 135-137
    • Tsai, M.-H.1    Zhang, B.2    Ma, T.-P.3    Wang, L.K.4
  • 9
    • 0028463791 scopus 로고
    • Random telegraph signals in deep submicron n-MOSFET's
    • Jul.
    • Z. Shi, J.-P. Miéville, and M. Dutoit, "Random telegraph signals in deep submicron n-MOSFET's," IEEE Trans. Election Devices, vol. ED-41, no. 7, pp. 1161-1168, Jul. 1994.
    • (1994) IEEE Trans. Election Devices , vol.ED-41 , Issue.7 , pp. 1161-1168
    • Shi, Z.1    Miéville, J.-P.2    Dutoit, M.3
  • 10
    • 0033884180 scopus 로고    scopus 로고
    • A method for locating the position of oxide traps responsible for random telegraph signals in submicron MOSFETs
    • Mar.
    • Z. Celik-Butler, P. Vasina, and N. V. Amarasinghe, "A method for locating the position of oxide traps responsible for random telegraph signals in submicron MOSFETs," IEEE Trans. Election Devices, vol. ED-47, no. 3, pp. 646-648, Mar. 2000.
    • (2000) IEEE Trans. Election Devices , vol.ED-47 , Issue.3 , pp. 646-648
    • Celik-Butler, Z.1    Vasina, P.2    Amarasinghe, N.V.3
  • 11
    • 0028711773 scopus 로고
    • A comparison of monte carlo and analytic treatments of displacement damage in si microvolumes
    • Dec.
    • C. J. Dale, L. Chen, P. J. McNulty, P. W. Marshall, and E. A. Burke, "A comparison of monte carlo and analytic treatments of displacement damage in si microvolumes," IEEE Trans. Nucl. Sci., vol. NS-41, no. 6, pp. 1974-1983, Dec. 1994.
    • (1994) IEEE Trans. Nucl. Sci. , vol.NS-41 , Issue.6 , pp. 1974-1983
    • Dale, C.J.1    Chen, L.2    McNulty, P.J.3    Marshall, P.W.4    Burke, E.A.5
  • 12
    • 48349084101 scopus 로고    scopus 로고
    • NEMO: A code to compute NIELs of protons, neutrons, electrons and heavy ions
    • Cap d'Agde, France, Sep. 19-23
    • C. Inguimbert and R. Gigante, "NEMO: a code to compute NIELs of protons, neutrons, electrons and heavy ions," in Radiation Effects on Components and Systems Conf. (RADECS), Cap d'Agde, France, Sep. 19-23, 2005.
    • (2005) Radiation Effects on Components and Systems Conf. (RADECS)
    • Inguimbert, C.1    Gigante, R.2
  • 14
    • 0024902703 scopus 로고
    • The generation lifetime damage factor and its variance in silicon
    • Dec.
    • C. J. Dale, P. W. Marshall, E. A. Burke, G. P. Summers, and G. E. Bender, "The generation lifetime damage factor and its variance in silicon," IEEE Trans. Nucl. Sci., vol. NS-36, no. 6, pp. 1872-1881, Dec. 1989.
    • (1989) IEEE Trans. Nucl. Sci. , vol.NS-36 , Issue.6 , pp. 1872-1881
    • Dale, C.J.1    Marshall, P.W.2    Burke, E.A.3    Summers, G.P.4    Bender, G.E.5
  • 15
    • 0034451543 scopus 로고    scopus 로고
    • Universal damage factor for radiation-induced dark current in silicon devices
    • Dec.
    • J. R. Srour and D. H. Lo, "Universal damage factor for radiation-induced dark current in silicon devices," IEEE Trans. Nucl. Sci., vol. NS-47, no. 6, pp. 2451-2459, Dec. 2000.
    • (2000) IEEE Trans. Nucl. Sci. , vol.NS-47 , Issue.6 , pp. 2451-2459
    • Srour, J.R.1    Lo, D.H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.