Annealing of vacancy complexes in P-doped silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 228, Issue 1-4 SPEC. ISS., 2005, Pages 218-225

  Ganchenkova, M G ^a   Borodin, V A ^b   Nieminen, R M ^a  

^a AALTO UNIVERSITY   (Finland)

^b KURCHATOV INSTITUTE   (Russian Federation)

Author keywords

Annealing; Density functional theory; Divacancy; E center; Monte Carlo simulation; Phosphorus; Silicon

Indexed keywords

ANNIHILATION; DENSITY FUNCTIONAL THEORY; DIVACANCY; E-CENTER;

ANNEALING; COMPUTER SIMULATION; CRYSTAL LATTICES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); HIGH ENERGY PHYSICS; KINETIC THEORY; MOLECULAR DYNAMICS; PROBABILITY DENSITY FUNCTION; SILICON;

COMPLEXATION;

EID: 11344278958     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.10.047     Document Type: Conference Paper

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