Observation of three-dimensional elemental distributions of a Si device using a 360°-tilt FIB and the cold field-emission STEM system

Ultramicroscopy

Volumn 108, Issue 12, 2008, Pages 1603-1615

  Yaguchi, Toshie ^a   Konno, Mitsuru ^a   Kamino, Takeo ^a   Watanabe, Masashi ^b,c  

^a HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

^b Lehigh University   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Energy dispersive X ray spectroscopy; Focused ion beam; Principle component analysis; Scanning transmission electron microscopy; Three dimensional elemental distribution

Indexed keywords

EMISSION SPECTROSCOPY; FIELD EMISSION; FOCUSED ION BEAMS; IMAGE SEGMENTATION; IMAGING TECHNIQUES; ION BOMBARDMENT; OPTICAL PROJECTORS; SIGNAL PROCESSING; SILICON; SPECIMEN PREPARATION; THREE DIMENSIONAL; TRANSMISSION ELECTRON MICROSCOPY; WATER POLLUTION;

ENERGY-DISPERSIVE X-RAY SPECTROSCOPY; FOCUSED ION BEAM; PRINCIPLE COMPONENT ANALYSIS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; THREE-DIMENSIONAL ELEMENTAL DISTRIBUTION;

PRINCIPAL COMPONENT ANALYSIS;

ARTICLE; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; PRINCIPAL COMPONENT ANALYSIS; ROENTGEN SPECTROSCOPY; THREE DIMENSIONAL IMAGING;

EID: 53249124704     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2008.06.003     Document Type: Article

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