Microstructure of low temperature grown AIN thin films on Si(111)

Journal of Applied Physics

Volumn 85, Issue 11, 1999, Pages 7879-7883

  Auner, G W ^a   Jin, F ^a   Naik, V M ^b   Naik, R ^a  

^a WAYNE STATE UNIVERSITY   (United States)

^b UNIVERSITY OF MICHIGAN DEARBORN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); FILM GROWTH; GRAIN BOUNDARIES; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PLASMA SOURCES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

PLASMA SOURCE MOLECULAR BEAM EPITAXY (PSMBE);

SEMICONDUCTING FILMS;

EID: 0032614143     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370600     Document Type: Article

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