Mechanism of eliminating basal plane dislocations in SiC thin films by epitaxy on an etched substrate

Applied Physics Letters

Volumn 89, Issue 8, 2006, Pages

  Zhang, Z ^a   Moulton, E ^a   Sudarshan, T S ^a  

^a University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANE DISLOCATION (BPD); EDGE DISLOCATIONS; HOMOEPITAXIAL GROWTH; STEP-FLOW GROWTH;

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ETCHING; POTASSIUM COMPOUNDS; SILICON CARBIDE; THERMAL EFFECTS;

SEMICONDUCTING FILMS;

EID: 33748093249     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2337874     Document Type: Article

References (10)

1. H. Matsunami and T. Kimoto, Mater. Sci. Eng., R. 20, 125 (1997).
2. S. Ha, M. Skowronski, and H. Lendenmann, J. Appl. Phys. 99, 393 (2004).
3. R. E. Stahlbush, M. E. Twigg, J. J. Sumakeris, K. G. Irvine, and P. A. Losee, Mater. Res. Soc. Symp. Proc. 815, J6.4.1 (2004).
4. J. P. Bergman, H. Lendenmann, P. Å. Nilsson, U. Lindefelt, and P. Skytt, Mater. Sci. Forum 353-356, 299 (2001).
5. J. J. Sumakeris, J. R. Jenny, and A. R. Powell, MRS Bull. 30, 280 (2005).
6. Z. Zhang and T. S. Sudarshan, Appl. Phys. Lett. 87, 151913 (2005).
7. S. Ha, P. Mieszkowski, M. Skowronski, and L. B. Rowland, J. Cryst. Growth 244, 257 (2002).
8. S. Ha, W. M. Vetter, M. Dudley, and M. Skowronski, Mater. Sci. Forum 389-393, 443 (2002).
9. Z. Zhang, Y. Gao, and T. S. Sudarshan, Electrochem. Solid-State Lett. 7, G264 (2004).
10. A. Galeckas, J. Linnros, and P. Pirouz, Phys. Rev. Lett. 96, 025502 (2006).