Nitrogen doping and multiplicity of stacking faults in SiC

Philosophical Magazine

Volumn 86, Issue 29-31, 2006, Pages 4685-4697

  Pirouz, P ^a   Zhang, M ^a   Hobgood, H McD ^b   Lancin, M ^c   Douin, J ^d   Pichaud, B ^c  

^a Case Western Reserve University   (United States)

^b Arkansas Power Electronics International Inc   (United States)

^c AIX MARSEILLE UNIVERSITY   (France)

^d CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; DOPING (ADDITIVES); FERMI LEVEL; NITROGEN; OPTICAL MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

BURGERS VECTOR; STACKING FAULT (SF); STACKING FAULT ENERGY LEVEL; WEAK-BEAM (WB);

SILICON CARBIDE;

EID: 33746915716     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786430600724470     Document Type: Article

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