4H-SiC epitaxial layers grown on on-axis Si-face substrate

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 53-56

  Hassan, J ^a   Bergman, J P ^a,b   Henry, A ^a   Pedersen, H ^a   McNally, P J ^c   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Norstel AB   (Sweden)

^c DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

AFM; Chemical vapor deposition; Hot Wall CVD reactor; On axis; SWBXT; X ray topography

Indexed keywords

CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SILICON WAFERS; SUBSTRATES; TOPOGRAPHY;

CVD REACTORS; GROWTH MECHANISMS; ON-AXIS; POLYTYPE STABILITY; SIC EPILAYERS; STRUCTURAL TECHNIQUES; SWBXT; X-RAY TOPOGRAPHY;

EPITAXIAL GROWTH;

EID: 38449084689     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.53     Document Type: Conference Paper

References (6)

1. M.Treu, R. Rupp, H. Brunner, F. Dahlquist and Ch. Hecht: Mat. Sc. For. 457-460 (2004) 981.
2. H. Jacobson, J.P. Bergman, C. Hallin, E. Janzen, T. Tuomi, H. Lendenmann,: J. Appl. Phy. 95 (2004) 1485.
3. C. Hallin, I. Ivanov, J. P. Bergman, E. Janzén: Mat. Sc. For. 457- 460, (2003)193.
4. A. Henry, J. ul Hassan, J. P. Bergman, C. Hallin, E. Janzén: Chemical Vapor Deposition, 12 (2006) 475.
5. J. P. Bergman, O. Kordina, E. Janzén: Phys. Stat. Sol. 162 (1997) 65.
6. T. Kimoto and H. Matsunami: J. Appl. Phys. 78 (1995) 3132.