Why are only some basal plane dislocations converted to threading edge dislocations during SiC epitaxy?

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 419-422

  Zhang, Z ^a   Shrivastava, A ^a   Sudarshan, T S ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

Basal plane dislocation; Conversion; Degradation; Epitaxy; PiN diode

Indexed keywords

DEGRADATION; DIODES; EPILAYERS; EPITAXIAL GROWTH; REACTIVE ION ETCHING; SILICON CARBIDE;

BASAL PLANE DISLOCATION; DISLOCATION LINES; THREADING EDGE DISLOCATIONS;

DISLOCATIONS (CRYSTALS);

EID: 37849019241     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.419     Document Type: Conference Paper

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