Local-property analysis for modeling of gate insulator materials

2006 International Workshop on Nano CMOS - Proceedings, IWNC

Volumn , Issue , 2006, Pages 209-235

  Doi, Kentaro ^a   Nakamura, Koichi ^a   Tachibana, Akitomo ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Dielectric property; IWNC; Nano CMOS; Regional density functional theory; Reliability La oxide; Rigged QED theory

Indexed keywords

DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; ERROR ANALYSIS; INSULATING MATERIALS; MATERIALS PROPERTIES; PROBABILITY DENSITY FUNCTION; SILICON COMPOUNDS;

DIELECTRIC BREAKDOWN; DIELECTRIC PROPERTY; GATE INSULATORS; IWNC; NANO CMOS; REGIONAL DENSITY FUNCTIONAL THEORY; RELIABILITY LA OXIDE; RIGGED QED THEORY;

DENSITY FUNCTIONAL THEORY;

EID: 52149094537     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWNC.2006.4570993     Document Type: Conference Paper

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