First-principle electronic properties of ZrO2 and HfO2 crystals under external electric field

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Volumn , Issue , 2001, Pages 234-237

  Egami, S ^a   Nakamura, K ^a   Tachibana, A ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DENSITY FUNCTIONAL THEORY; DIELECTRIC PROPERTIES; ELECTRIC FIELDS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HAFNIUM OXIDES; PERTURBATION TECHNIQUES; RECONFIGURABLE HARDWARE; WAVE FUNCTIONS; ZIRCONIUM ALLOYS;

ELECTRONIC CURRENT; EXTERNAL ELECTRIC FIELD; FINITE TEMPERATURES; FIRST PRINCIPLE CALCULATIONS; FIRST PRINCIPLES; FIRST-PRINCIPLES APPROACHES; PERTURBATION THEORY; REGIONAL DENSITY FUNCTIONAL THEORY;

DIELECTRIC MATERIALS;

EID: 0037604912     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2001.967592     Document Type: Conference Paper

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