The influence of undoped GaN surface flatness on the properties of the blue light-emitting diode wafer

Semiconductor Science and Technology

Volumn 23, Issue 9, 2008, Pages

  Li, Shuti ^a   Cao, Jianxing ^a   Fan, Guanghan ^a   Zhang, Yong ^a   Zheng, Shuwen ^a   Sun, Huiqing ^a   Su, Jun ^a  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; GALLIUM ALLOYS; GALLIUM NITRIDE; GEOPHYSICAL PROSPECTING; LEAKAGE CURRENTS; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SURFACE PROPERTIES;

BLUE-LIGHT-EMITTING; DISLOCATION DENSITIES; FORWARD VOLTAGE; MULTIPLE-QUANTUM-WELL; OUTPUT POWERS; REVERSE LEAKAGE CURRENT; SMOOTH SURFACES; SURFACE FLATNESS;

SURFACE MORPHOLOGY;

EID: 51849105503     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/9/095003     Document Type: Article

References (21)

1. Strite S and Morkoc H 1992 J. Vac. Sci. Technol. B 10 1237
2. Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H and Sugimoto Y 1996 Japan. J. Appl. Phys. 35 L74
3. Akasaki I, Amano H, Koide Y, Hiramatsu K and Sawaki N 1989 J. Crystal Growth 98 209
4. Nakamura S 1991 Japan. J. Appl. Phys. 80 L1705
5. Nakamura S, Senoh M, Iwasa N, Nagahama S, Yamada T and Kukai T 1998 Japan. J. Appl. Phys. 37 L479
6. Nakamura S, Mukai T and Senoh M 1992 J. Appl. Phys. 71 L11
7. Kozodoy P, Ibbetson J P, Marchand H, Fini P T, Keller S, Speck J S, DenBaars S P and Mishra U K 1998 Appl. Phys. Lett. 73 975
8. Huang G S, Kuo H C, Lo M H, Lu T C, Tsai J Y and Wang S C 2007 J. Crystal Growth 305 55
9. Yang T, Uchida K, Mishima T, Kasai J and Gotoh J 2000 Phys. Status Solidi a 180 45
10. Chen J, Zhang S M, Zhang B S, Zhu J J, Shen X M, Feng G, Liu J P, Wang Y T, Yang H and Zheng W C 2003 J. Crystal Growth 256 248
11. Liu C H, Chuangb R W, Chang S J, Su Y K, Wu L W and Lin C C 2004 Mater. Sci. Eng. B 112 10
12. Han J, Ng T-B, Biefeld R M, Crawford M H and Follstaedt D M 1997 Appl. Phys. Lett. 71 3114
13. Koleske D D, Fischer A J, Allerman A A, Mitchell C C, Cross K C, Kurtz S R, Figiel J J, Fullmer K W and Breiland W G 2002 Appl. Phys. Lett. 81 1940
14. Nishio J, Sugiura L, Fujimoto H, Kokubun Y and Itaya K 1997 Appl. Phys. Lett. 70 3431
15. Chen X and Uesugi T 2006 Appl. Phys. Lett. 88 031916
16. Kapolnek D, Wu X H, Heying B, Keller S, Keller B P, Mishra U K, DenBaars S P and Speck J S 1995 Appl. Phys. Lett. 67 1541
17. Ning X J, Chien F R, Pirouz P, Yang J W and Khan M A 1996 J. Mater. Res. 11 580
18. Johnson M C, Bourret-Courchesne E D, Wu J, Liliental-Weber Z and Zakharov D N 2004 J. Appl. Phys. 96 1381
19. Sun W H, Yang J W, Chen C Q, Zhang J P, Gaevski M E, Kuokstis E, Adivarahan V, Wang H M, Gong Z, Su M and Asif Khana M 2003 Appl. Phys. Lett. 83 2599
20. Lee S W, Oh D C, Goto H, Ha J S, Lee H J, Hanada T, Cho M W and Yao T 2006 Appl. Phys. Lett. 89 132117
21. Bourret A, Adelmann C, Daudin B, Rouvière J L, Feuillet G and Mula G 2001 Phys. Rev. B 63 245307