Improvement of efficiency and ESD characteristics of ultraviolet light-emitting diodes by inserting AlGaN and SiN buffer layers

Journal of Crystal Growth

Volumn 305, Issue 1, 2007, Pages 55-58

  Huang, G S ^a   Kuo, H C ^a   Lo, M H ^a   Lu, T C ^a   Tsai, J Y ^b   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b HighLink Technology Corporation   (Taiwan)

Author keywords

A1. Defects; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B3. Light emitting diodes

Indexed keywords

ALUMINUM GALLIUM NITRIDE; BUFFER LAYERS; ELECTROCHEMICAL ETCHING; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; ULTRAVIOLET DEVICES;

ETCHING PIT DENSITY; INJECTION CURRENTS; INSERTION LAYERS; ULTRAVIOLET LIGHT-EMITTING DIODES (UVLED);

LIGHT EMITTING DIODES;

EID: 34250022911     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.04.022     Document Type: Article

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