Growth and characteristics of low dislocation density GaN grown on Si(111) from a single process

Applied Physics Letters

Volumn 88, Issue 3, 2006, Pages 1-3

  Chen, X ^a   Uesugi, T ^a  

^a Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COALESCENCE; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; SILICON; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION DENSITY; EPILAYER; FLAT SURFACE;

CRYSTALLINE MATERIALS;

EID: 31144432932     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2158487     Document Type: Article

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