Effect of Sr-ruthenate seed layer on dielectric properties of SrTiO 3 thin films prepared by plasma-enhanced atomic layer deposition

Journal of the Electrochemical Society

Volumn 155, Issue 10, 2008, Pages

  Ahn, Ji Hoon ^a   Kang, Sang Won ^a   Kim, Ja Yong ^b   Kim, Jin Hyock ^b   Roh, Jae Sung ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AGRICULTURAL PRODUCTS; ALKALINE EARTH METALS; CERAMIC CAPACITORS; DIELECTRIC PROPERTIES; MOLECULAR BEAM EPITAXY; NONMETALS; OXYGEN; OZONE WATER TREATMENT; PLASMA DEPOSITION; PULSED LASER DEPOSITION; RANDOM ACCESS STORAGE; SEED; SOLIDS; STRONTIUM; STRONTIUM COMPOUNDS; THICK FILMS; THIN FILMS; TITANIUM; VAPOR DEPOSITION;

DIELECTRIC CONSTANTS; DYNAMIC RANDOM ACCESS MEMORIES; ENHANCED DIELECTRIC PROPERTIES; EQUIVALENT-OXIDE THICKNESS; INTERFACIAL LAYERS; LAYER THICKNESSES; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POST ANNEALING PROCESSING; POST-ANNEALING; RUTHENATE; SEED LAYERS; SRTI O3 FILMS; STRONTIUM RUTHENATE; TITANIUM TETRA-ISOPROPOXIDE;

ATOMIC LAYER DEPOSITION;

EID: 51849095921     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2960898     Document Type: Article

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