Dependence of electrical properties on film thickness in lanthanum-doped lead zirconate titanate stannate antiferroelectric thin films

Journal of Applied Physics

Volumn 85, Issue 7, 1999, Pages 3753-3758

  Xu, Baomin ^a   Ye, Yaohong ^a   Wang, Qing Ming ^a   Cross, L Eric ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACETIC ACID; DOPING (ADDITIVES); LEAD COMPOUNDS; MICROSTRUCTURE; PERMITTIVITY; PEROVSKITE; PLATINUM; POLARIZATION; REMANENCE; SILICON WAFERS; SOL-GELS; THIN FILMS;

ANTIFERROELECTRIC THIN FILMS; HYSTERESIS LOOPS; PHASE SWITCHING FIELDS;

DIELECTRIC MATERIALS;

EID: 0032622271     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369744     Document Type: Article

References (29)

1. J. F. Scott, Ferroelectrics Rev. 1, 1 (1998).
2. L. E. Cross and S. Trolier-McKinstry, Ency. Appl. Phys. 21, 429 (1997).
3. K. R. Udayakumar, P. J. Schuele, J. Chen, S. B. Krupanidhi, and L. E. Cross, J. Appl. Phys. 77, 3981 (1995).
4. R. E. Newnham, K. R. Udayakumar, and S. Trolier-McKinstry, in Chemical Processing of Advanced Materials, edited by L. L. Hench and J. K. West (Wiley, New York, 1982), pp. 379-393.
5. Y. Sakashita and H. Segawa, J. Appl. Phys. 73, 7857 (1993).
6. P. K. Larsen, G. J. M. Dormans, D. J. Taylor, and P. J. van Veldhoven, J. Appl. Phys. 76, 2405 (1994).
7. G. H. Haertling, Integr. Ferroelectr. 14, 219 (1997).
8. S. Trolier-McKinstry, C. A. Randall, J. P. Maria, C. Theis, D. G. Schlom, J. Shepard. Jr., and K. Yamakawa, Mater. Res. Soc. Symp. Proc. 433, 363 (1996).
9. S. B. Ren, C. J. Lu, J. S. Liu, H. M. Shen, and Y. N. Wang, Phys. Rev. B 55, 3485 (1997).
10. S. Trolier-McKinstry, P. Aungkavattana, F. Chu, J. Lacey, J-P. Maria, J. F. Shepard, Jr., T. Su, and F. Xu, Mater. Res. Soc. Symp. Proc. 493, 59 (1998).
11. W. Y, Pan, Q. M. Zhang, A. S. Bhalla, and L E. Cross, J. Am. Ceram. Soc. 72, 571 (1989).
12. K. Markowski, S.-E. Park, S. Yoshikawa, and L. E. Cross, J. Am. Ceram. Soc. 79, 3297 (1996).
13. K. G. Brooks, J. Chen, K. R. Udayakumar, and L. E. Cross, J. Appl. Phys. 75, 1699 (1994).
14. S. S. Sengupta, D. Roberts, J.-F. Li, M. C. Kim, and D. A. Payne, J. Appl. Phys. 78, 1171 (1995).
15. C. J. Gaskey, K. R. Udayakumar, H. D. Chen, and L. E. Cross, J. Mater. Res. 10, 2764 (1995).
16. B. Xu, N. G. Pai, and L. E. Cross, Mater. Lett. 34, 157 (1998).
17. B. Xu, N. G. Pai, Q.-M. Wang, and L. E. Cross, Integr. Ferroelectr. 22, 545 (1998).
18. B. Xu, P. Moses, N. G. Pai, and L. E. Cross, Appl. Phys. Lett. 72, 593 (1998).
19. I. Kanno, S. Hayashi, M. Kitagawa, R. Takayama, and T. Hirao, Appl. Phys. Lett. 66, 145 (1995).
20. S. Chattopadhyay, Nanostruct. Mater. 9, 551 (1997).
21. P. Ayyub, S. Chattopadhyay, R. Pinto, and M. S. Multani, Phys. Rev. B 57, R5559 (1998).
22. B. Xu, L. E. Cross, and D. Ravichandran, J. Am. Ceram. Soc. (in press).
23. T. Tani, Z. Xu, and D. A. Payne, Mater. Res. Soc. Symp. Proc. 310, 269 (1993).
24. H. D. Chen, K. K. Li, C. J. Gaskey, and L. E. Cross, Mater. Res. Soc. Symp. Proc. 433, 325 (1996).
25. J. Zhu, X. Zhang, Y. Zhu, and S. B. Desu, J. Appl. Phys. 83, 1610 (1998).
26. D. Berlincourt, IEEE Trans. Sonics Ultrason. SU-13, 116 (1966).
27. E. Sawagushi, G. Shirane, and Y. Takagi, J. Phys. Soc. Jpn. 6, 333 (1951).
28. S. A. Campbell, The Science and Engineering of Microelectronic Fabrication (Oxford University Press, 1996), p. 516.
29. D. Berlincourt, H. H. A. Krueger, and B. Jaffe, J. Phys. Chem. Solids Suppl. 25, 659 (1964).